Patent classifications
H01L2224/75318
Mechanism to attach a die to a substrate
A mechanism to attach a die to a substrate and method of use are disclosed. The vacuum carrier includes a frame composed of material compatible with solder reflow process. The vacuum carrier further includes a vacuum port extending from a top surface to an underside surface of the frame. The vacuum carrier further includes a seal mechanism provided about a perimeter on the underside surface of the frame of the vacuum carrier. The frame and seal mechanism are structured to maintain a flatness of a die attached to the vacuum carrier by a vacuum source during the solder reflow process.
Bonding tool and bonding method thereof
A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.
Method of manufacturing semiconductor device
A bonding method for bonding a first substrate to a second substrate includes fixing the first substrate to a first surface of a first bonding chuck and fixing the second substrate to a second surface of a second bonding chuck, the second surface facing the first surface; aligning the second bonding chuck above the first bonding chuck in a vertical direction or in a horizontal direction; bonding the first substrate to the second substrate to make a bonded substrate; and wherein, in the bonding the first substrate to the second substrate, injecting a process gas between the first substrate and the second substrate using a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view and injecting an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate using an air curtain generator are performed in combination.
BONDING TOOL AND BONDING METHOD THEREOF
A bonding tool and a bonding method are provided. The method includes: providing a bonding tool having a first surface, wherein the bonding tool comprises a plurality of suction holes and a bending member movably arranged in a trench of the bonding tool; attaching a semiconductor die by the bonding tool to contact a semiconductor wafer with a partial bonding, wherein the suction holes provide a suction force to hold the semiconductor die; causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding while keeping the suction force to hold the semiconductor die at the same time; and releasing the semiconductor die from the bonding tool by removing the suction force subsequent to the full bonding.
Die bonding tool with tiltable bond head for improved bonding and methods for performing the same
A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.