Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:

Q|.sub.T1.sup.T2A(T)dT.sub.T1.sup.T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.

An optical package structure includes a substrate having a first surface, an interposer bonded to the first surface through a bonding layer, the interposer having a first area from a top view perspective, and an optical device on the interposer, having a second area from the top view perspective, the first area being greater than the second area. A method for manufacturing the optical package structure is also provided.

A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

A package structure includes a redistribution layer having a first surface, a second surface disposed opposite to the first surface, and at least one sidewall connected to the first surface and the second surface, at least one bonding electrode disposed on the first surface of the redistribution layer, and a mounting layer disposed on the second surface of the redistribution layer. The mounting layer includes a plurality of conductive pads that are spaced apart from each other. At least one of the conductive pads is exposed by the sidewall of the redistribution layer.

A package structure includes a redistribution layer having a first surface, a second surface disposed opposite to the first surface, and at least one sidewall connected to the first surface and the second surface, at least one bonding electrode disposed on the first surface of the redistribution layer, and a mounting layer disposed on the second surface of the redistribution layer. The mounting layer includes a plurality of conductive pads that are spaced apart from each other. At least one of the conductive pads is exposed by the sidewall of the redistribution layer.

A semiconductor structure includes a substrate; a first die disposed over the substrate; a second die disposed over the substrate; a molding disposed over the substrate and surrounding the first die and the second die; an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed over the first die, the second die and the molding, and the conductive member is surrounded by the dielectric layer; and a via extended within the second die and between the dielectric layer and the substrate.

A semiconductor structure includes a substrate; a first die disposed over the substrate; a second die disposed over the substrate; a molding disposed over the substrate and surrounding the first die and the second die; an interconnect structure including a dielectric layer and a conductive member, wherein the dielectric layer is disposed over the first die, the second die and the molding, and the conductive member is surrounded by the dielectric layer; and a via extended within the second die and between the dielectric layer and the substrate.

A package structure includes a redistribution layer, at least one bonding electrode, and a mounting layer. The redistribution layer has a first surface, a second surface disposed opposite to the first surface, and at least one sidewall connected to the first surface and the second surface. The bonding electrode is disposed on the first surface of the redistribution layer. The mounting layer is disposed on the second surface of the redistribution layer. The mounting layer includes a plurality of conductive pads spaced apart from each other, wherein at least one of the conductive pads is exposed by the sidewall of the redistribution layer.