A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.

A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer.

Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.

Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.

A semiconductor package includes: a first structure having a first insulating layer disposed on one surface, and first electrode pads and first dummy pads penetrating through the first insulating layer, a second structure having a second insulating layer having the other surface bonded to the one surface and the first insulating layer and disposed on the other surface, and second electrode pads and second dummy pads that penetrate through the second insulating layer, the second electrode pads being bonded to the first electrode pads, respectively, and the second dummy pads being bonded to the first dummy pads, respectively. In the semiconductor chip, ratios of surface areas per unit area of the first and second dummy pads to the first and second insulating layers on the one surface and the other surface gradually decrease toward sides of the first and second structures.

A semiconductor package includes: a first structure having a first insulating layer disposed on one surface, and first electrode pads and first dummy pads penetrating through the first insulating layer, a second structure having a second insulating layer having the other surface bonded to the one surface and the first insulating layer and disposed on the other surface, and second electrode pads and second dummy pads that penetrate through the second insulating layer, the second electrode pads being bonded to the first electrode pads, respectively, and the second dummy pads being bonded to the first dummy pads, respectively. In the semiconductor chip, ratios of surface areas per unit area of the first and second dummy pads to the first and second insulating layers on the one surface and the other surface gradually decrease toward sides of the first and second structures.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:
Q≤|∫.sub.T1.sup.T2A(T)dT−∫.sub.T1.sup.T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:
Q≤|∫.sub.T1.sup.T2A(T)dT−∫.sub.T1.sup.T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

A semiconductor package structure includes a semiconductor die having an active surface, a conductive bump electrically coupled to the active surface, and a dielectric layer surrounding the conductive bump. The conductive bump and the dielectric layer form a planar surface at a distal end of the conductive bump with respect to the active surface. The distal end of the conductive bump is wider than a proximal end of the conductive bump with respect to the active surface.