A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.

A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A method of forming a semiconductor structure includes forming a first conductive contact in a first dielectric layer coupled to a first device and forming a second conductive contact in the first dielectric layer coupled to a second device. A first trench is formed in the first dielectric layer having a first depth and exposing at least a portion of the first conductive contact. A second trench is formed in the first dielectric layer having a second depth different than the first depth and exposing at least a portion of the second conductive contact. A first conductive layer is formed in the first trench and the second trench. A second dielectric layer is formed in the first trench and the second trench over the first conductive layer.