The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

A semiconductor package including: a first wiring structure; a semiconductor chip disposed on the first wiring structure; a second wiring structure disposed on the semiconductor chip and including a cavity; and a filling member between the first wiring structure and the second wiring structure and in the cavity, wherein an uppermost end of the filling member and an uppermost end of the second wiring structure are located at the same level.

A semiconductor package including: a first wiring structure; a semiconductor chip disposed on the first wiring structure; a second wiring structure disposed on the semiconductor chip and including a cavity; and a filling member between the first wiring structure and the second wiring structure and in the cavity, wherein an uppermost end of the filling member and an uppermost end of the second wiring structure are located at the same level.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.