A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.

A semiconductor package includes; a wiring structure including signal wiring and heat transfer wiring, an active chip on the wiring structure, a signal terminal disposed between the wiring structure and the active chip, a first heat transferring terminal disposed between the wiring structure and the active chip and connected to the heat transfer wiring, a passive chip on the wiring structure, a second heat transferring terminal disposed between the wiring structure and the passive chip and connected to the heat transfer wiring, and a heat spreader on the passive chip.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

The present disclosure provides a semiconductor package structure and a method of manufacturing a semiconductor package structure. The semiconductor package structure includes a first substrate having a first side and a second side opposite to the first side, wherein the first side includes a recess recessed from the first side, a first semiconductor die arranged in the recess bonded to the first side of the first substrate; a second semiconductor die bonded to the second side of the first substrate; and a second substrate electrically bonded to the first side of the first substrate.

The present disclosure provides a semiconductor package structure and a method of manufacturing a semiconductor package structure. The semiconductor package structure includes a first substrate having a first side and a second side opposite to the first side, wherein the first side includes a recess recessed from the first side, a first semiconductor die arranged in the recess bonded to the first side of the first substrate; a second semiconductor die bonded to the second side of the first substrate; and a second substrate electrically bonded to the first side of the first substrate.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.

A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.