A method includes forming a layer stack with at least one electrically insulating layer structure and at least one patterned electrically conductive layer structure on a temporary carrier, the layer stack includes a lower surface adjoining the temporary carrier and an upper surface opposite to the lower surface; mounting a first component at the upper surface; placing a first frame structure at the upper surface, the first frame structure surrounding at least partially the first component; covering the first component with a first coating material, the first coating material spatially extending at least partially into voids at or within the first frame structure and into voids at or within the layer stack; and removing the temporary carrier. The lower surface of the layer stack is an even surface. The opposite upper surface of the layer stack is an uneven surface. An electronic package can be manufactured with the described method.

A chip package structure is provided. The chip package structure includes a first chip structure including a substrate and an interconnect layer over the substrate. The chip package structure includes a second chip structure over the interconnect layer. The chip package structure includes a first conductive bump connected between the interconnect layer and the second chip structure. The chip package structure includes a conductive pillar over the interconnect layer. The chip package structure includes a molding layer over the interconnect layer and surrounding the second chip structure, the first conductive bump, and the conductive pillar. The chip package structure includes a second conductive bump over a first surface of the conductive pillar. The first surface faces away from the first chip structure.

A chip package structure is provided. The chip package structure includes a first chip structure including a substrate and an interconnect layer over the substrate. The chip package structure includes a second chip structure over the interconnect layer. The chip package structure includes a first conductive bump connected between the interconnect layer and the second chip structure. The chip package structure includes a conductive pillar over the interconnect layer. The chip package structure includes a molding layer over the interconnect layer and surrounding the second chip structure, the first conductive bump, and the conductive pillar. The chip package structure includes a second conductive bump over a first surface of the conductive pillar. The first surface faces away from the first chip structure.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

A package structure and a method of forming the same are provided. The package structure includes a package substrate and an interposer substrate over the package substrate. The interposer substrate has a first surface facing the package substrate and a second surface opposite the first surface. A first semiconductor device is disposed on the first surface, and a second semiconductor device is disposed on the second surface. Conductive structures are disposed between the interposer substrate and the package substrate. The first semiconductor device is located between the conductive structures. A first side of the first semiconductor device is at a first distance from the most adjacent conductive structure, and a second side of the first semiconductor device is at a second distance from the most adjacent conductive structure. The first side is opposite the second side, and the first distance is greater than the second distance.

A package structure and a method of forming the same are provided. The package structure includes a package substrate and an interposer substrate over the package substrate. The interposer substrate has a first surface facing the package substrate and a second surface opposite the first surface. A first semiconductor device is disposed on the first surface, and a second semiconductor device is disposed on the second surface. Conductive structures are disposed between the interposer substrate and the package substrate. The first semiconductor device is located between the conductive structures. A first side of the first semiconductor device is at a first distance from the most adjacent conductive structure, and a second side of the first semiconductor device is at a second distance from the most adjacent conductive structure. The first side is opposite the second side, and the first distance is greater than the second distance.

A method of manufacturing the semiconductor structure includes: providing a substrate; forming a first conductive via and a second conductive via extending in the substrate; depositing a first dielectric layer over the substrate and the first and second conductive vias; receiving a waveguide; moving the waveguide to a location over the first dielectric layer and aligning the waveguide with a position of the first dielectric layer; attaching the waveguide to the position of the first dielectric layer; forming a first conductive member and a second conductive member over the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; and etching a backside of the substrate to electrically expose the first and second conductive vias. The first conductive member or the second conductive member is electrically connected to the first or second conductive via.

A method of manufacturing the semiconductor structure includes: providing a substrate; forming a first conductive via and a second conductive via extending in the substrate; depositing a first dielectric layer over the substrate and the first and second conductive vias; receiving a waveguide; moving the waveguide to a location over the first dielectric layer and aligning the waveguide with a position of the first dielectric layer; attaching the waveguide to the position of the first dielectric layer; forming a first conductive member and a second conductive member over the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; and etching a backside of the substrate to electrically expose the first and second conductive vias. The first conductive member or the second conductive member is electrically connected to the first or second conductive via.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.