An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package. For instance, in accordance with one embodiment, there is a substrate package having embodied therein a functional silicon die at a top layer of the substrate package; a solder resist layer beneath the functional silicon die of the substrate package; a plurality of die bumps at a bottom surface of the functional silicon die, the plurality of die bumps electrically interfacing the functional silicon die to a substrate through a plurality of solder balls at a top surface of the solder resist layer; each of the plurality of die bumps electrically interfaced to a nickel pad at least partially within the solder resist layer and beneath the solder balls; each of the plurality of die bumps electrically interfaced through the nickel pads to a conductive pad exposed at a bottom surface of the solder resist layer; and in which each of the conductive pads exposed at the bottom surface of the solder resist layer are electrically interfaced to an electrical trace at the substrate of the substrate package. Other related embodiments are disclosed.

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package. For instance, in accordance with one embodiment, there is a substrate package having embodied therein a functional silicon die at a top layer of the substrate package; a solder resist layer beneath the functional silicon die of the substrate package; a plurality of die bumps at a bottom surface of the functional silicon die, the plurality of die bumps electrically interfacing the functional silicon die to a substrate through a plurality of solder balls at a top surface of the solder resist layer; each of the plurality of die bumps electrically interfaced to a nickel pad at least partially within the solder resist layer and beneath the solder balls; each of the plurality of die bumps electrically interfaced through the nickel pads to a conductive pad exposed at a bottom surface of the solder resist layer; and in which each of the conductive pads exposed at the bottom surface of the solder resist layer are electrically interfaced to an electrical trace at the substrate of the substrate package. Other related embodiments are disclosed.

A package substrate film including a film substrate including upper and lower surfaces; a test pattern including an upper test line pattern extending on the upper surface of the film substrate; a lower test line pattern extending on the lower surface of the film substrate; a first test via pattern penetrating the film substrate and connecting the upper test line pattern to the lower test line pattern; a second test via pattern penetrating the film substrate outside the first test via pattern and connecting the upper test line pattern to the lower test line pattern; and a test pad between the first test via pattern and the second test via pattern, the test pad including first test pad at an outer side of the first test via pattern; and second test pad at an inner side of the second test via pattern and facing the first test pad.

A package substrate film including a film substrate including upper and lower surfaces; a test pattern including an upper test line pattern extending on the upper surface of the film substrate; a lower test line pattern extending on the lower surface of the film substrate; a first test via pattern penetrating the film substrate and connecting the upper test line pattern to the lower test line pattern; a second test via pattern penetrating the film substrate outside the first test via pattern and connecting the upper test line pattern to the lower test line pattern; and a test pad between the first test via pattern and the second test via pattern, the test pad including first test pad at an outer side of the first test via pattern; and second test pad at an inner side of the second test via pattern and facing the first test pad.

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate in an offset pattern. An electrical component is disposed in a die attach area over a first surface of the substrate. The conductive vias are formed around the die attach area of the substrate. A first conductive layer is formed over the first surface of the substrate, and a second conductive layer is formed over the second surface. An encapsulant is deposited over the substrate and electrical component. The substrate is singulated through the conductive vias. A first conductive via has a greater exposed surface area than a second conductive via. A shielding layer is formed over the electrical component and in contact with a side surface of the conductive vias. The shielding layer may extend over a second surface of substrate opposite the first surface of the substrate.

A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate in an offset pattern. An electrical component is disposed in a die attach area over a first surface of the substrate. The conductive vias are formed around the die attach area of the substrate. A first conductive layer is formed over the first surface of the substrate, and a second conductive layer is formed over the second surface. An encapsulant is deposited over the substrate and electrical component. The substrate is singulated through the conductive vias. A first conductive via has a greater exposed surface area than a second conductive via. A shielding layer is formed over the electrical component and in contact with a side surface of the conductive vias. The shielding layer may extend over a second surface of substrate opposite the first surface of the substrate.

A semiconductor package includes: a redistribution substrate including a connection via and a redistribution layer electrically connected to each other, and a redistribution pad electrically connected to the redistribution layer by the connection via, a space pattern separating at least some of the redistribution pads from each other, a dummy metal pattern at least partially surrounded by the space pattern, and a degassing opening passing through at least one of the redistribution pad and the dummy metal pattern; a connection bump electrically connected to the redistribution pad; and a semiconductor chip on the redistribution substrate and including a connection pad electrically connected to the redistribution layer, the redistribution pad including a plurality of protrusions protruding from the same plane in directions different from each other and having a corner having a rounded shape, and the dummy metal pattern includes branch patterns each extending in directions different from one another.