A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

A semiconductor device includes a substrate that includes a first insulating layer, a conductive layer on the first insulating layer, a second insulating layer on the conductive layer, and an opening that passes through the conductive layer and the second insulating layer and in which part of the conductive layer is exposed, a conductive material that contacts at least the first insulating layer and the part of the conductive layer in the opening, and a semiconductor chip that has an electrode extending towards the first insulating layer within the opening and contacting the conductive material.

A semiconductor device includes a substrate that includes a first insulating layer, a conductive layer on the first insulating layer, a second insulating layer on the conductive layer, and an opening that passes through the conductive layer and the second insulating layer and in which part of the conductive layer is exposed, a conductive material that contacts at least the first insulating layer and the part of the conductive layer in the opening, and a semiconductor chip that has an electrode extending towards the first insulating layer within the opening and contacting the conductive material.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.

A semiconductor package includes an interposer, a die, a protective layer, a plurality of first electrical connectors and a first molding material. The die includes a first surface and a second surface opposite to the first surface, and the die is bonded to the interposer through the first surface. The protective layer is disposed on the second surface of the die. The first electrical connectors are disposed aside the die. The first molding material is disposed aside the die, the protection layer and the first electrical connectors.

A semiconductor package includes an interposer, a die, a protective layer, a plurality of first electrical connectors and a first molding material. The die includes a first surface and a second surface opposite to the first surface, and the die is bonded to the interposer through the first surface. The protective layer is disposed on the second surface of the die. The first electrical connectors are disposed aside the die. The first molding material is disposed aside the die, the protection layer and the first electrical connectors.

A semiconductor package includes: a lower substrate including a lower wiring layer; a semiconductor chip disposed on the lower substrate, the semiconductor chip including a first surface facing the lower substrate and a second surface opposite to the first surface; an upper substrate disposed on the lower substrate and the semiconductor chip, the upper substrate including a lower surface on which support members protruding toward the second surface of the semiconductor chip are disposed; a connection structure disposed between the lower substrate and the upper substrate; an encapsulant filling a space between the lower substrate and the upper substrate and encapsulating at least a portion of the semiconductor chip and the connection structure; and adhesive members disposed on the second surface of the semiconductor chip such as to correspond to the support members, respectively, the adhesive members disposed in contact with the second surface and the support members.