The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.

The present disclosure relates to the field of fabricating microelectronic packages, wherein magnetic particles distributed within a solder paste may be used to form a magnetic intermetallic compound interconnect. The intermetallic compound interconnect may be exposed to a magnetic field, which can heat a solder material to a reflow temperature for attachment of microelectronic components comprising the microelectronic packages.

RFID inlays or straps may be assembled using impulse heating of metal precursors. Metal precursors are applied to and/or included in contacts on an RFID IC and/or terminals on a substrate. During assembly of the tag, the IC is disposed onto the substrate such that the IC contacts physically contact either the substrate terminals or metal precursors that in turn physically contact the substrate terminals. Impulse heating is then used to rapidly apply heat to the metal precursors, processing them into metallic structures that electrically couple the IC contacts to the substrate terminals.

A semiconductor device substrate and wiring member including a first noble metal plating layer to become internal terminals is formed at predetermined sites on a metal plate, a metal plating layer is formed on the first noble metal plating layer as having a same shape as the first noble metal plating layer, a second noble metal plating layer to become external terminals is formed on a part of the metal plating layer, and a height of a surface of the second noble metal plating layer from a surface of the metal plate is larger than a height of a surface of the first noble metal plating layer from the surface of the metal plate.

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.

A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.

An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

A method includes attaching semiconductor devices to an interposer structure, attaching the interposer structure to a first carrier substrate, attaching integrated passive devices to the first carrier substrate, forming an encapsulant over the semiconductor devices and the integrated passive devices, debonding the first carrier substrate, attaching the encapsulant and the semiconductor devices to a second carrier substrate, forming a first redistribution structure on the encapsulant, the interposer structure, and the integrated passive devices, wherein the first redistribution structure contacts the interposer structure and the integrated passive devices, and forming external connectors on the first redistribution structure.