H01L2224/81469

Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

SEMICONDUCTOR PACKAGES HAVING A DAM STRUCTURE

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

SEMICONDUCTOR PACKAGES HAVING A DAM STRUCTURE

A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

Circuit substrate

A circuit substrate that includes a substrate having a major surface, a multilayer body on the major surface, and an insulating layer that covers the major surface. The multilayer body includes a first layer and a second layer that overlies the first layer. The first layer is made of a first metal as a main material thereof, and the second layer is made of a second metal as a main material thereof. The second metal has a higher solder wettability than the first metal. As viewed perpendicular to the major surface, the insulating layer is spaced from and surrounds the surface of the second layer so as to define a recess between the multilayer body and the insulating layer.

Circuit substrate

A circuit substrate that includes a substrate having a major surface, a multilayer body on the major surface, and an insulating layer that covers the major surface. The multilayer body includes a first layer and a second layer that overlies the first layer. The first layer is made of a first metal as a main material thereof, and the second layer is made of a second metal as a main material thereof. The second metal has a higher solder wettability than the first metal. As viewed perpendicular to the major surface, the insulating layer is spaced from and surrounds the surface of the second layer so as to define a recess between the multilayer body and the insulating layer.

METHODS FOR FORMING ELEMENTS FOR MICROELECTRONIC COMPONENTS, RELATED CONDUCTIVE ELEMENTS, AND MICROELECTRONIC COMPONENTS, ASSEMBLIES AND ELECTRONIC SYSTEMS INCORPORATING SUCH CONDUCTIVE ELEMENTS

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.

METHODS FOR FORMING ELEMENTS FOR MICROELECTRONIC COMPONENTS, RELATED CONDUCTIVE ELEMENTS, AND MICROELECTRONIC COMPONENTS, ASSEMBLIES AND ELECTRONIC SYSTEMS INCORPORATING SUCH CONDUCTIVE ELEMENTS

A microelectronic component comprises a substrate having at least one bond pad on a surface thereof and a metal pillar structure on the at least one bond pad, the metal pillar structure comprising a metal pillar on the at least one bond pad and a solder material having a portion within a reservoir within the metal pillar and another portion protruding from an end of the metal pillar opposite the at least one bond pad. Methods for forming the metal pillar structures, metal pillar structures, assemblies and systems incorporating the metal pillar structures are also disclosed.