A display device includes a flexible base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the flexible base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A display device includes a flexible base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the flexible base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

The present invention relates to a conductive paste for bonding that comprises a metal powder and a solvent, wherein the metal powder comprises a first metal powder having a particle diameter (D50) of 10 to 150 nm and a second metal powder having a particle diameter (D50) of 151 to 500 nm. The paste is useful for manufacturing an electronic device comprising a substrate with an electrically conductive layer and an electrical or electronic component, which are reliably bonded together using the paste.

The present invention relates to a conductive paste for bonding that comprises a metal powder and a solvent, wherein the metal powder comprises a first metal powder having a particle diameter (D50) of 10 to 150 nm and a second metal powder having a particle diameter (D50) of 151 to 500 nm. The paste is useful for manufacturing an electronic device comprising a substrate with an electrically conductive layer and an electrical or electronic component, which are reliably bonded together using the paste.

A semiconductor chip includes: a base substrate; a conductive pad on one surface of the base substrate; an insulating layer on the one surface of the base substrate and having an opening exposing a portion of the conductive pad; and a bump on the exposed portion of the conductive pad and on the insulating layer around the opening. The bump includes a plurality of concave portions corresponding to the opening and is arranged in a longitudinal direction of the bump.

A semiconductor chip includes: a base substrate; a conductive pad on one surface of the base substrate; an insulating layer on the one surface of the base substrate and having an opening exposing a portion of the conductive pad; and a bump on the exposed portion of the conductive pad and on the insulating layer around the opening. The bump includes a plurality of concave portions corresponding to the opening and is arranged in a longitudinal direction of the bump.