A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A display device includes a base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

Semiconductor packages may include a semiconductor chip including a chip pad and a lower redistribution that includes a lower redistribution insulating layer and a lower redistribution pattern. The lower redistribution insulating layer may include a top surface facing the semiconductor chip. The semiconductor packages may also include a molding layer on a side of the semiconductor chip and including a bottom surface facing the lower redistribution structure and a conductive post in the molding layer. The conductive post may include a bottom surface contacting the lower redistribution. The top surface of the lower redistribution insulating layer may be closer to a top surface of the conductive post than a top surface of the molding layer. A roughness of the top surface of the molding layer may be greater than a roughness of the top surface of the conductive post.

A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

A display device includes a flexible base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the flexible base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

A display device includes a flexible base layer including a first portion and a second portion disposed around the second portion; a display unit disposed on a first surface of the first portion and including a light emitting element; a driving circuit disposed on a first surface of the second portion and including a driving chip; a support member attached to a second surface of the first portion and a second surface of the second portion; and an adhesive member disposed between the flexible base layer and the support member, wherein the adhesive member includes a first adhesive member having a first elastic modulus and a second adhesive member having a second elastic modulus that is higher than the first elastic modulus, and the second adhesive member overlaps the driving circuit.

Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies. An interconnect structure, electrically coupled with the bridge, may include a via structure including a first conductive material, a barrier layer including a second conductive material disposed on the via structure, and a solderable material including a third conductive material disposed on the barrier layer. The first conductive material, the second conductive material, and the third conductive material may have different chemical composition. Other embodiments may be described and/or claimed.