Patent classifications
H01L2224/8159
Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
An apparatus includes a circuit substrate including a circuit trace and a micro-sized semiconductor device die electrically connected to the circuit substrate. The micro-sized semiconductor device die has a height not greater than 400 microns and a width not greater than 800 microns. An anisotropic conductive adhesive (ACA) is disposed between the circuit substrate and the micro-sized semiconductor device die, thereby providing an electrical connection from the circuit substrate to the micro-sized semiconductor device die.
Mounting structure and method for producing mounting structure
A mounting structure, including: a first component that has a first bump; a second component that has a second bump; a mounting component that has a primary mounting surface and a secondary mounting surface; a first solder that connects an electrode on the primary mounting surface and the first bump; a second solder that connects an electrode on the secondary mounting surface and the second bump; and a reinforcing resin that covers a part of the first solder and that is not in contact with the primary mounting surface.
MOUNTING STRUCTURE AND METHOD FOR MANUFACTURING SAME
A mounting structure includes a bonding material (106) that bonds second electrodes (104) of a circuit board (105) and bumps (103) of a semiconductor package (101), the bonding material (106) being surrounded by a first reinforcing resin (107). Moreover, a portion between the outer periphery of the semiconductor package (101) and the circuit board (105) is covered with a second reinforcing resin (108). Even if the bonding material (106) is a solder material having a lower melting point than a conventional bonding material, high drop resistance is obtained.
MOUNTING STRUCTURE AND METHOD FOR MANUFACTURING SAME
A mounting structure includes a bonding material (106) that bonds second electrodes (104) of a circuit board (105) and bumps (103) of a semiconductor package (101), the bonding material (106) being surrounded by a first reinforcing resin (107). Moreover, a portion between the outer periphery of the semiconductor package (101) and the circuit board (105) is covered with a second reinforcing resin (108). Even if the bonding material (106) is a solder material having a lower melting point than a conventional bonding material, high drop resistance is obtained.
Electronics assemblies employing copper in multiple locations
Electronic assemblies may be fabricated with interconnects of different types present in multiple locations and comprising fused copper nanoparticles. Each interconnect or a portion thereof comprises a bulk copper matrix formed from fusion of copper nanoparticles or a reaction product formed from copper nanoparticles. The interconnects may comprise a copper-based wire bonding assembly, a copper-based flip chip connection, a copper-based hermetic seal assembly, a copper-based connector between an IC substrate and a package substrate, a copper-based component interconnect, a copper-based interconnect comprising via copper for establishing electrical communication between opposite faces of a package substrate, a copper-based interconnect defining a heat channel formed from via copper, and any combination thereof.
Mounted structure and manufacturing method of mounted structure
In a case where a first mounted substrate to which a semiconductor element is bounded by solder is mounted on a second substrate, connection strength becomes low, when the first mounted substrate is bonded to the second substrate by using a solder having a low melting point. A mounted structure, in which a first mounted substrate on which a semiconductor element is bonded by using a first solder having a melting point of 217 C. or more, is mounted on a second substrate, includes plural bonding parts bonding the first mounted substrate to the second substrate; and a reinforcing member formed around the bonding part. Each of the bonding parts contains a second solder having a melting point, that is lower than the melting point of the first solder, and a space exists, in which the reinforcing members do not exist, between the bonding parts neighboring each other.
Mounted structure and manufacturing method of mounted structure
In a case where a first mounted substrate to which a semiconductor element is bounded by solder is mounted on a second substrate, connection strength becomes low, when the first mounted substrate is bonded to the second substrate by using a solder having a low melting point. A mounted structure, in which a first mounted substrate on which a semiconductor element is bonded by using a first solder having a melting point of 217 C. or more, is mounted on a second substrate, includes plural bonding parts bonding the first mounted substrate to the second substrate; and a reinforcing member formed around the bonding part. Each of the bonding parts contains a second solder having a melting point, that is lower than the melting point of the first solder, and a space exists, in which the reinforcing members do not exist, between the bonding parts neighboring each other.
MOUNTING STRUCTURE AND METHOD FOR PRODUCING MOUNTING STRUCTURE
A mounting structure, including: a first component that has a first bump; a second component that has a second bump; a mounting component that has a primary mounting surface and a secondary mounting surface; a first solder that connects an electrode on the primary mounting surface and the first bump; a second solder that connects an electrode on the secondary mounting surface and the second bump; and a reinforcing resin that covers a part of the first solder and that is not in contact with the primary mounting surface.