A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.