A molded semiconductor package arrangement may comprise a die pad configured to support a semiconductor; a set of leads; and a mold structure that is formed to enclose the semiconductor and the die pad within the mold structure. The set of leads and the die pad may be formed from a same piece of conductive material. An electrical contact plane of the set of leads may be offset from a bottom surface of the die pad. The mold structure may include a molded standoff that is beneath the die pad. A bottom surface of the molded standoff may extend below the electrical contact plane of the set of leads by a threshold distance that corresponds to a thickness of the molded standoff.

A molded semiconductor package arrangement may comprise a die pad configured to support a semiconductor; a set of leads; and a mold structure that is formed to enclose the semiconductor and the die pad within the mold structure. The set of leads and the die pad may be formed from a same piece of conductive material. An electrical contact plane of the set of leads may be offset from a bottom surface of the die pad. The mold structure may include a molded standoff that is beneath the die pad. A bottom surface of the molded standoff may extend below the electrical contact plane of the set of leads by a threshold distance that corresponds to a thickness of the molded standoff.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

A semiconductor package includes a carrier having a recess, a semiconductor die arranged on the carrier such that a first side of the semiconductor die faces the carrier, and a contact clip arranged over a second side of the semiconductor die, opposite the first side. The contact clip includes a lowered part. The lowered part is arranged in the recess.

A semiconductor module is provided, where a coolant circulation portion of a cooling apparatus has a first coolant flow channel and a second coolant flow channel arranged so as to sandwich therebetween a fin region in which a cooling fin is provided, and each having two ends in a longitudinal direction, a casing portion of the cooling apparatus includes a first opening provided on an end side corresponding to a first end of the first coolant flow channel and a second opening provided on an end side corresponding to a second end of the second coolant flow channel, the second end and the first end are arranged on the same side of the casing portion, and the first coolant flow channel and the second coolant flow channel are each at least partly provided below the cooling fin.

In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.

In a semiconductor device, on a heat dissipation portion of a lead frame opposite to a mounting portion on which a semiconductor element is mounted, a thin molding portion having a thickness of about 0.02 mm to 0.3 mm is formed by a second molding resin which is a high-heat-dissipation resin. A scale-like portion on which scale-shaped projections are consecutively formed is provided over both sides across a resin boundary portion of the heat dissipation portion. The scale-like portion reaches abutting surfaces of an upper die and a lower die of a mold used in a molding process. Thus, the same void inhibition effect as with an air vent is obtained.

A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.

A semiconductor device includes a semiconductor chip including a semiconductor substrate with a top surface electrode deposited on a top surface of the semiconductor substrate. An insulating film selectively covers edges of a top surface of the top surface electrode, and a plating layer covers the top surface of the top surface electrode exposed to an opening of the insulating film. A metal wiring plate includes a junction part located over the insulating film and the plating layer, and provided with a groove recessed upward from a bottom surface of the junction part. A solder part fills the groove so as to bond the plating layer and the bottom surface of the junction part together. A boundary between the insulating film and the plating layer is encompassed within the groove.

An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.