A power converting device such that an overcurrent is interrupted and damage to a power semiconductor element can be prevented is obtained. The power converting device includes a power semiconductor element, a wiring member connected to an electrode of the power semiconductor element, a bus bar that supplies power to the power semiconductor element, and a frame that houses the power semiconductor element, wherein the bus bar has a connection terminal connected to the wiring member, and a fuse portion is provided in the connection terminal.

A power converting device such that an overcurrent is interrupted and damage to a power semiconductor element can be prevented is obtained. The power converting device includes a power semiconductor element, a wiring member connected to an electrode of the power semiconductor element, a bus bar that supplies power to the power semiconductor element, and a frame that houses the power semiconductor element, wherein the bus bar has a connection terminal connected to the wiring member, and a fuse portion is provided in the connection terminal.

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.