Provided is a wire bonding state determination device which determines a bonding state between a pad and a wire after the wire is bonded to the pad. The wire bonding state determination device includes: a waveform detector which makes an incident wave incident to the wire, and detects a transmission waveform of the wire and a reflection waveform from a first bonding surface between the pad and the wire; and a bonding determination unit which determines the bonding state between the pad and the wire based on the transmission waveform and the reflection waveform detected by the waveform detector.

An LED module includes: a substrate having a main surface and a back surface which face in opposite directions from each other in a thickness direction; a first LED chip including a first electrode pad bonded to a surface facing the same direction as the main surface; a first wire having one end bonded to the first electrode pad; and a wiring pattern having a main surface electrode formed in the main surface, wherein the main surface electrode includes a first die pad portion which supports the first LED chip, and when viewed from the thickness direction, the first die pad portion includes a main pad portion to which the first LED chip is bonded and an auxiliary pad portion which protrudes from the main pad portion in a direction toward a position of the first electrode pad from the center position in the first LED chip.

A light emitting device includes: a first lead including a first base portion having a constant thickness and a first small-thickness portion having a thickness smaller than that of the first base portion; a second lead including a second base portion having a constant thickness and a second small-thickness portion having a thickness smaller than that of the second base portion; wherein the first small-thickness portion and the second small-thickness portion face each other with a gap interposed therebetween; the length of the gap is 0.9 to 1.2 times the thickness of the edges of the first small-thickness portion and the second small-thickness portion; the length of the bonding wire in a plan view of the light emitting device is smaller than a value obtained by adding the thickness of the base portion, a width of a mounting-disabled area, and a width of a bonding-disabled area.

A method of determining a bonding status between a wire and at least one bonding location of a workpiece is provided. The method includes the steps of: (a) bonding a portion of a wire to a bonding location of a workpiece using a bonding tool of a wire bonding machine; (b) determining a motion profile of the bonding tool for determining if the portion of the wire is bonded to the bonding location, the motion profile being configured to result in the wire being broken during the motion profile if the portion of the wire is not bonded to the bonding location; and (c) moving the bonding tool along the motion profile to determine if the portion of the wire is bonded to the bonding location. Other methods of determining a bonding status between a wire and at least one bonding location of a workpiece are also provided.

A method of forming a wire loop in connection with a semiconductor package is provided. The method includes the steps of: (1) providing package data related to the semiconductor package to a wire bonding machine; (2) providing at least one looping control value related to a desired wire loop to the wire bonding machine, the at least one looping control value including at least a loop height value related to the desired wire loop; (3) deriving looping parameters, using an algorithm, for forming the desired wire loop; (4) forming a first wire loop on the wire bonding machine using the looping parameters derived in step (3); (5) measuring actual looping control values of the first wire loop formed in step (4) corresponding to the at least one looping control value; and (6) comparing the actual looping control values measured in step (5) to the at least one looping control value provided in step (2).

In examples, an electronic device comprises a printed circuit board (PCB), an orifice extending through the PCB, and a semiconductor die suspended above the orifice by aluminum bond wires. The semiconductor die is vertically aligned with the orifice and the bond wires coupled to the PCB.

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and a method of manufacturing thereof, that comprises a first semiconductor die, a plurality of adhesive regions spaced apart from each other on the first semiconductor die, and a second semiconductor die adhered to the plurality of adhesive regions.

A clamping system, a wire bonding machine and a method for bonding wires are provided. An exemplary clamping system includes a clamping device. The clamping device includes: at least one linear guide rail; a first clamping rod arranged perpendicular to the linear guide rail; and a second clamping rod arranged perpendicular to the linear guide rail and parallel to the first clamping rod.

A second lead frame is set onto a conductive layer and a busbar. The second lead frame has holes previously formed at opposite ends thereof, and pieces of solder material or solder pieces are inserted into the holes. Then, the solder pieces are vibrated by an ultrasonically vibrating tool, whereby the solder pieces are melted without having a high temperature. The second lead frame is thus bonded to the conductive layer and the busbar. A semiconductor element and the busbar are connected by a first lead frame and the second lead frame. The connection structure thereof is such that the second lead frame to be bonded by ultrasonic bonding or other bonding methods is not directly in contact with the semiconductor element, which eliminates the risk of damage to the semiconductor element.

A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.