A performance of a semiconductor device is improved. The semiconductor device according to one embodiment includes a wire that is bonded to one bonding surface at a plurality of parts in an opening formed in an insulating film of a semiconductor chip. The semiconductor device includes also a sealer that seals the semiconductor chip and the wire so that the sealer is in contact with the bonding surface. An area of a part of the bonding surface, the part not overlapping the wire, is small.

A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.

An electrical interconnection includes a wire loop having a first end bonded to a first bonding site using a first bonding portion, and a second end bonded to a second bonding site using a second bonding portion. The second bonding portion includes a folded portion having a wire that extends from the second end of the wire loop and is folded on the second bonding site. The folded portion includes a first folded portion connected to the second end of the wire loop and extending toward the first bonding site, a second folded portion provided on the first folded portion, and a tail protruding from a portion of the second folded portion. An interface is formed between the first and second folded portions. A top surface of the second folded portion includes an inclined surface recessed toward the first folded portion.