Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

A display device including a display panel including a first panel pad, a first circuit board including a first pad spaced from the first panel pad and a coating member on the first pad, and a wire connecting the first panel pad and the first pad to each other. The coating member includes a same material as the wire and integrally connected to the wire.

A semiconductor package including a redistribution substrate with a first insulating layer, one or more second insulating layers on the first insulating layer, and a plurality of redistribution layers. The first insulating layer includes a first photosensitive resin having an elongation of 60% or more and toughness of 70 mJ/mm.sup.3 or more. The one or more second insulating layers include a second photosensitive resin having an elongation in a range of 10% to 40% and toughness of 40 mJ/mm.sup.3.

A semiconductor package including a redistribution substrate with a first insulating layer, one or more second insulating layers on the first insulating layer, and a plurality of redistribution layers. The first insulating layer includes a first photosensitive resin having an elongation of 60% or more and toughness of 70 mJ/mm.sup.3 or more. The one or more second insulating layers include a second photosensitive resin having an elongation in a range of 10% to 40% and toughness of 40 mJ/mm.sup.3.

A packaged integrated circuit device includes a substrate having a surface thereon. A spacer and a first semiconductor chip are provided at spaced-apart locations on a first portion of the surface of the substrate. This first portion of the surface of the substrate has a lateral area equivalent to a sum of: (i) a lateral footprint of the spacer, (ii) a lateral footprint of the first semiconductor chip, and (iii) an area of an entire lateral space between the spacer and the first semiconductor chip. A stack of second semiconductor chips is provided, which extends on the spacer and on the first semiconductor chip. The stack of second semiconductor chips has a lateral footprint greater than the lateral area of the first portion of the surface of the substrate so that at least a portion of the stack of second semiconductor chips overhangs at least one sidewall of at least one of the spacer and the first semiconductor chip, which extend between the stack of second semiconductor chips and the surface of the substrate.

A packaged integrated circuit device includes a substrate having a surface thereon. A spacer and a first semiconductor chip are provided at spaced-apart locations on a first portion of the surface of the substrate. This first portion of the surface of the substrate has a lateral area equivalent to a sum of: (i) a lateral footprint of the spacer, (ii) a lateral footprint of the first semiconductor chip, and (iii) an area of an entire lateral space between the spacer and the first semiconductor chip. A stack of second semiconductor chips is provided, which extends on the spacer and on the first semiconductor chip. The stack of second semiconductor chips has a lateral footprint greater than the lateral area of the first portion of the surface of the substrate so that at least a portion of the stack of second semiconductor chips overhangs at least one sidewall of at least one of the spacer and the first semiconductor chip, which extend between the stack of second semiconductor chips and the surface of the substrate.

A package structure is provided. The package structure includes a die, a lead frame, and a conductive glue. The lead frame includes a die pad and a retaining wall structure. The die pad is configured to support the die, and the retaining wall structure surrounds the die. The conductive glue is disposed between the die and the lead frame.

A package structure is provided. The package structure includes a die, a lead frame, and a conductive glue. The lead frame includes a die pad and a retaining wall structure. The die pad is configured to support the die, and the retaining wall structure surrounds the die. The conductive glue is disposed between the die and the lead frame.

An apparatus includes a substrate for mounting an integrated circuit. The substrate includes a primary layer including a first surface that is a first external surface of the substrate. The substrate includes an inner layer that is located below the primary layer and including a second surface. A portion of the second surface of the inner layer is exposed via an open area associated with the primary layer. The inner layer includes a first multiple of wire bond pads that are exposed via the open area associated with the primary layer.

An apparatus includes a substrate for mounting an integrated circuit. The substrate includes a primary layer including a first surface that is a first external surface of the substrate. The substrate includes an inner layer that is located below the primary layer and including a second surface. A portion of the second surface of the inner layer is exposed via an open area associated with the primary layer. The inner layer includes a first multiple of wire bond pads that are exposed via the open area associated with the primary layer.