Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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H01L2224/8538
Bonding interfaces outside the semiconductor or solid-state body
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H01L2224/854
with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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H01L2224/85417
the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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H01L2224/85423
Magnesium (Mg) as principal constituent
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H01L2224/85423

METHOD FOR MANUFACTURING WIRE BONDING STRUCTURE, WIRE BONDING STRUCTURE, AND ELECTRONIC DEVICE
20170062381 · 2017-03-02 ·

A manufacturing method for a wire bonding structure of the present invention includes a step of preparing a wire made of Cu and a step of joining the wire to a first joining target formed on an electronic device. Before the joining step, the wire has an outer circumferential surface and a withdrawn surface. The withdrawn surface is withdrawn toward a central axis of the wire from the outer circumferential surface. In the joining step, ultrasonic vibration is applied to the wire in a state in which the withdrawn surface is pressed against the first joining target.