A printed circuit board (PCB) includes an insulating layer with an upper surface and a lower surface opposite to the upper surface; a first conductive pattern on the upper surface of the insulating layer; a second conductive pattern on the lower surface of the insulating layer; an aluminum pattern that covers at least a portion of an upper surface of the first conductive pattern; and a first passivation layer that covers at least a portion of sides of the first conductive pattern and that prevents diffusion into the first conductive pattern.

A semiconductor package comprising a substrate including substrate pads on a top surface thereof, a first upper semiconductor chip on the substrate and including conductive chip pads, and bonding wires coupled to the substrate pads and the first upper semiconductor chip. The bonding wires include first and second bonding wires. The substrate has a first region between the conductive chip pads and the substrate pads, and a second region between the first region and the substrate pads. The second bonding wire has a maximum vertical level on the first region of the substrate. On the first region of the substrate, the first bonding wire is at a level higher than that of the second bonding wire. On the second region of the substrate, the second bonding wire is at a level higher than that of the first bonding wire.

A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes at least one layer having a coefficient of thermal expansion (CTE) approximately matching a CTE of the ceramic base. The mounting pad includes at least one layer having a low-yield strength of equal to or less than 200 MPa. The mounting pad includes at least one copper layer and at least one molybdenum layer. The semiconductor package also includes a bond pad coupled to another mounting pad under the ceramic base through a conductive slug in the ceramic base.

The present invention relates to a substrate for an optical device, which is configured to connect an optical element substrate and an electrode substrate in a fitting manner, and simultaneously, to form one or more bridge pads which are insulated from the optical element substrate by a horizontal insulating layer, on the optical element substrate. The substrate for an optical device according to a first aspect of the present invention comprises: an optical element substrate which is made of a metal plate and contains a plurality of optical elements therein; a pair of electrode substrates which are made of an insulating material to form a conductive layer on at least a portion of the upper surface thereof, are connected to both side surfaces of the optical element substrate, respectively, and are wire-bonded to the electrodes of the optical elements; and a fitting means which is formed on the side surfaces of the electrode substrate and the optical element substrate to fit the optical element substrate and the electrode substrate. The substrate for an optical device according to a second aspect of the present invention comprises: an optical element substrate which is made of a metal plate and contains a plurality of optical elements therein; a pair of electrode substrates which are made of a metal material to be connected to both side surfaces of the optical element substrate, respectively, and are wire-bonded to the electrodes of the optical elements; a fitting means which is formed on the side surfaces of the electrode substrate and the optical element substrate to fit the optical element substrate and the electrode substrate; and a fitting-type vertical insulating layer which is interposed between the optical element substrate and the electrode substrate so as to be connected to the fitting means.

A stacked integrated circuit (IC) system including a substrate, a contour support, and a first and second IC dies. The contour support including a first support frame attached to the substrate defining a first lateral contact surface substantially orthogonal to the substrate, a support plate on the first support frame substantially parallel to the substrate, and a second support frame on the support plate defining a second lateral contact surface substantially orthogonal to the substrate, with the first and second lateral contact surfaces laterally offset from each other. The first integrated circuit die with a side abutting the first lateral contact surface, the second integrated circuit die with a side abutting the second lateral contact surface such that at least a portion of the support plate is between the first and second integrated circuit dies.

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.