A semiconductor package device includes a first conductive structure, a second conductive structure and a dielectric layer. The first conductive structure has a tapered portion. The second conductive structure surrounds the tapered portion of the first conductive structure and is in direct contact with a side wall of the tapered portion of the first conductive structure. The dielectric layer surrounds the tapered portion of the first conductive structure and is in direct contact with the side wall of the tapered portion of the first conductive structure.

A semiconductor package device includes a first conductive structure, a second conductive structure and a dielectric layer. The first conductive structure has a tapered portion. The second conductive structure surrounds the tapered portion of the first conductive structure and is in direct contact with a side wall of the tapered portion of the first conductive structure. The dielectric layer surrounds the tapered portion of the first conductive structure and is in direct contact with the side wall of the tapered portion of the first conductive structure.

In order to improve reliability of a semiconductor device, the semiconductor device includes a semiconductor chip, a die pad, a plurality of leads, and a sealing portion. The die pad and the leads are made of a metal material mainly containing copper. A plating layer is formed on a top surface of the die pad. The plating layer is formed by a silver plating layer, a gold plating layer, or a platinum plating layer. The semiconductor chip is mounted on the plating layer on the top surface of the die pad via a bonding material. The plating layer is covered by the bonding material not to be in contact with the sealing portion.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes under the plurality of semiconductor layers; a first lead frame disposed under a first electrode of the light emitting chip; a second lead frame disposed under a second electrode of the light emitting chip; a protective chip disposed between the first and second lead frames and electrically connected to the first and second electrodes; and a reflective member disposed on a periphery of the light emitting chip and the first and second lead frames.

A light emitting device disclosed in an embodiment includes: a light emitting chip including a plurality of semiconductor layers and first and second electrodes under the plurality of semiconductor layers; a first lead frame disposed under a first electrode of the light emitting chip; a second lead frame disposed under a second electrode of the light emitting chip; a protective chip disposed between the first and second lead frames and electrically connected to the first and second electrodes; and a reflective member disposed on a periphery of the light emitting chip and the first and second lead frames.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.