A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.

One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

A radio-frequency module component includes a splitter/combiner and a shield case. The splitter/combiner includes a multilayer body, a common input/output electrode, a low-band input/output electrode, a high-band input/output electrode, and outer ground electrodes. The multilayer body includes insulating layers and electrode patterns stacked on each other, and side surfaces opposed to each other. The common input/output electrode is disposed on one of the side surfaces and a bottom surface of the multilayer body. The low-band input/output electrode and the high-band input/output electrode are disposed on another of the side surfaces and the bottom surface of the multilayer body. An additional side surface of the multilayer body opposes a side surface of the shield case in the closest proximity to each other.

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

A compact antenna module with integrated thermal management. The module includes at least one antenna and amplifier such as power amplifiers or low-noise amplifiers. An anisotropic thermal interface material is positioned such that it is in thermal communication with these components. The anisotropic thermal interface material includes plural aligned thermally anisotropic composite layers having a first thermal conductivity in a first direction and a second, larger thermal conductivity in a second direction and extend substantially parallel to each other in the first direction. The layers include hexagonal boron nitride (hBN) in a binder aligned in the second direction approximately perpendicular to the first direction such that x-y planes of the hBNalign in the second direction. In this manner, the thermal conductivity in the second direction is at least 13.5 W/mK, with a dielectric constant of less than 4, and a loss tangent of less than 0.007.

In an IC chip, a control unit is connected to at least one of a first switch unit and a second switch unit. In plan view from a thickness direction of a substrate, a plurality of first terminals are located between the first switch unit and the second switch unit in a first direction, and are arranged in a line in a second direction intersecting with the first direction. In plan view from the thickness direction of the substrate, a plurality of second terminals are located between the plurality of first terminals, and the first switch unit or the second switch unit, and are arranged in a line in the second direction. The plurality of first terminals include at least one control terminal among a plurality of control terminals connected to the control unit. The plurality of second terminals include a ground terminal.

A radio frequency module comprises a first component, a second component and a pedestal all supported by a first surface. The first component, the second component and pedestal all extend along a first axis perpendicular to the first surface. Along the first axis, the first component is longer than the second component and the pedestal is between the second component and the first surface. A first solder is between the first surface and the first component, a second solder is between the pedestal and the second component, and a third solder is between the first surface and the pedestal. Along a second axis which is parallel to the first surface, a first dimension of the first solder is greater than a second dimension of the second solder, and a third dimension of the third solder is greater than the second dimension.

A flip-chip semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die at least first and second contact pads and a transistor including a first terminal formed within the active layer. A first portion of the first terminal falls within a footprint of the first contact pad and a second portion of the first terminal falls within a footprint of the second contact pad.

Embodiments described herein may be related to apparatuses, processes, and techniques related to a transceiver architecture for inter-die communication on-package using mm-wave/THz interconnects. In particular, amplifier-less transceivers are used in combination with on-package low loss transmission lines to provide inter-die communication. In embodiments, signals on the interconnect may be transmitted between up conversion mixers and down conversion mixers without any additional amplification. Other embodiments may be described and/or claimed.

Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.