A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

Described are semiconductor interposer, and microelectronic device assemblies incorporating such semiconductor interposers. The described interposers include multiple redistribution structures on each side of the core; each of which may include multiple individual redistribution layers. The interposers may optionally include circuit elements, such as passive and/or active circuit. The circuit elements may be formed at least partially within the semiconductor core.

A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, first and second leads electrically connecting contacts of the respective first and second microelectronic elements to the terminals, and third leads electrically interconnecting the contacts of the first and second microelectronic elements. The contacts of the first microelectronic element can be exposed at the front surface thereof adjacent the edge thereof. The contacts of the second microelectronic element can be disposed in a central region of the front surface thereof. The first, second, and third leads can have portions aligned with the aperture.

A printed circuit board (PCB) includes an insulating layer with an upper surface and a lower surface opposite to the upper surface; a first conductive pattern on the upper surface of the insulating layer; a second conductive pattern on the lower surface of the insulating layer; an aluminum pattern that covers at least a portion of an upper surface of the first conductive pattern; and a first passivation layer that covers at least a portion of sides of the first conductive pattern and that prevents diffusion into the first conductive pattern.

Package structures and methods of forming the same are disclosed. A package structure includes at least one first integrated circuit, at least one second integrated circuit, at least one dummy substrate and an encapsulant. The at least one second integrated circuit is disposed on the at least one dummy substrate in a first direction, and the at least one first integrated circuit and the at least one dummy substrate are separated by a distance in a second direction perpendicular to the first direction. The encapsulant is aside the at least one first integrated circuit, the at least one second integrated circuit and the at least one dummy substrate.

An electronic device includes a substrate, at least one electronic element on the substrate, a heat dissipating pad on the substrate in thermal contact with the at least one electronic element, and including an encapsulated phase change material therein, and a bracket covering the substrate, the at least one electronic element and the heat dissipating pad.

A method of manufacturing a semiconductor device includes: providing, on a substrate, a first magnetic substrate including a base, a first side wall portion and a second side wall portion at opposed ends of the base, the sidewall portions extending from the base, providing a semiconductor chip over the base at a location between the first side wall portion and the second side wall portion, providing a plate-like magnetic substrate having a second surface, the second surface provided with a resin thereon, and positioning the plate-like magnetic substrate having a second surface with the resin thereon such that the second surface faces the base of the first magnetic substrate. Then the plate like magnetic substrate is moved in the direction of the first magnetic substrate to contact the second surface of the plate like magnetic substrate with the first side wall portion and the second side wall portion.

Disclosed herein is a method of forming a device, comprising mounting a plurality of first interconnects on one or more first integrated circuit dies. One or more second integrated circuit dies are mounted on a first side of an interposer. The interposer is mounted at a second side to the first integrated circuit dies, the plurality of first interconnects disposed outside of the interposer. The interposer is mounted to a first side of a substrate by attaching the first interconnects to the substrate, the substrate in signal communication with one or more of the first integrated circuit dies through the first interconnects.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

A semiconductor package includes a first semiconductor device, a second semiconductor device vertically positioned above the first semiconductor device, and a ground shielded transmission path. The ground shielded transmission path couples the first semiconductor device to the second semiconductor device. The ground shielded transmission path includes a first signal path extending longitudinally between a first end and a second end. The first signal path includes a conductive material. A first insulating layer is disposed over the signal path longitudinally between the first end and the second end. The first insulating layer includes an electrically insulating material. A ground shielding layer is disposed over the insulating material longitudinally between the first end and the second end of the signal path. The ground shielding layer includes a conductive material coupled to ground. The ground shielding layer drives radiation signals received therein to ground to prevent induced noise in the first signal path.