An analog to digital converter (ADC) comprising: a delay circuit having a complementary signal output; a first comparator having an input coupled to the complementary signal output of the delay circuit, the first comparator having a first output and a second output; a first dummy comparator having a first dummy input coupled to the first output and a second dummy input coupled to the second output, the first dummy comparator having a dummy output; a first interpolation comparator having an interpolation output and a first interpolation input coupled to the first output; a second dummy comparator having an input coupled to the interpolation output; and a second interpolation comparator having a second interpolation input and a third interpolation input, the second interpolation input coupled to the interpolation output and the third interpolation input coupled to the dummy output.

A data receiving circuit is provided. The data receiving circuit includes a data input circuit, a latch circuit, and a current source. The data input circuit is configured to receive an input signal. The latch circuit is configured to output an output signal in response to the input signal. The current source is configured to provide a current to the latch circuit. The current source is different from the data input circuit.

To provide a miniaturized data holding circuit. First and second MOS transistors respectively transmit a data signal and an inverted data signal to inputs of first and second inverting gates that constitute a state holding circuit when a clock signal is at a first level. Fifth and sixth MOS transistors are respectively inserted in a feedback path from an output of the second inverting gate to the input of the first inverting gate and a feedback path from an output of the first inverting gate to the input of the second inverting gate, and respectively transmit the outputs of the second and first inverting gates when the clock signal is at a second signal level. Seventh and eighth MOS transistors are constituted in a channel of a conductive type different from the first MOS transistor and connected in parallel to the fifth and sixth MOS transistors, respectively, and transmit the output of the second inverting gate and the output of the first inverting gate on the basis of the inverted data signal and the data signal, respectively.

Techniques are disclosed relating to level-shifting circuitry and time borrowing across voltage domains. In some embodiments, sense amplifier circuitry generates, based on an input signal at a first voltage level, an output signal at a second, different voltage level. Pulse circuitry may generate a pulse signal in response to an active clock edge of a clock signal that is input to the sense amplifier circuitry. Initial resolution circuitry may drive the output signal of the sense amplifier circuitry to match the value of the input signal during the pulse signal. Secondary resolution circuitry may maintain a current value of the output signal after expiration of the pulse signal. This may allow the input signal to change during the pulse, e.g., to enable time borrowing by upstream circuitry.

A comparator includes a first-stage circuit, a second-stage circuit, a first switching circuit and a second switching circuit. The first-stage circuit includes a first input circuit and a second input circuit. The first switching circuit is configured to control the conduction of the first input circuit, and the second switching circuit is configured to control the conduction of the second input circuit. The first input circuit is configured to generate a first differential signal in a sampling phase when being switched on. The second input circuit is configured to generate a second differential signal in a sampling phase when being switched on. The second-stage circuit is configured to amplify and latch the first differential signal or the second differential signal in a regeneration phase to output a comparison signal.

A low latency comparator circuit with a local clock circuit is disclosed. A comparator circuit configured to compare a first input signal to a second input signal. The comparator circuit includes at least one regenerative latch circuit having a first and second inputs configured to receive the first and second input signals, respectively. The comparator circuit further includes a clock circuit configured to generate and provide a clock signal exclusively to circuitry in the comparator circuit, including the at least one regenerative latch circuit. At least one output latch circuit coupled to the at least one regenerative latch circuit and configured to provide a first output signal indicative of a comparison of the first and second input signals.

The present disclosure includes storage circuits, such latches. In one embodiment, a circuit includes a plurality of latches, each latch including a first N-type transistor formed in a first P-type material, a first P-type transistor formed in a first N-type material, a second N-type transistor formed in a second P-type material, and a second P-type transistor formed in a second N-type material. The first and second N-type transistors are formed in different P-wells and the first and second P-type transistors are formed in different N-wells. In other storage circuits, charge extraction transistors are coupled to data storage nodes and are biased in a nonconductive state. These techniques make the data storage circuits more resilient, for example, to an ionizing particle striking the circuit and generating charge carriers that would otherwise change the state of the storage node.

Systems, methods, circuits, and apparatus for managing flip flop circuits are provided. In one aspect, a flip flop circuit includes a first sub-circuit having a first inner node between a first input node and a first output node, a second sub-circuit having a second inner node between a second input node and a second output node, and a third sub-circuit coupled between the first and second inner nodes. The third sub-circuit is configured to be: in an open state to conductively disconnect the first and second inner nodes, and in a close state to conductively connect the first and second inner nodes, such that a first output at the first output node corresponds to a second input at the second input node and a second output at the second output node corresponds to a first input at the first input node.

The present disclosure includes storage circuits, such latches. In one embodiment, a circuit includes a plurality of latches, each latch including a first N-type transistor formed in a first P-type material, a first P-type transistor formed in a first N-type material, a second N-type transistor formed in a second P-type material, and a second P-type transistor formed in a second N-type material. The first and second N-type transistors are formed in different P-wells and the first and second P-type transistors are formed in different N-wells. In other storage circuits, charge extraction transistors are coupled to data storage nodes and are biased in a nonconductive state. These techniques make the data storage circuits more resilient, for example, to an ionizing particle striking the circuit and generating charge carriers that would otherwise change the state of the storage node.

A method and apparatus for controlling a frequency range of a self-resonant frequency (SRF) of a high speed divider implemented in current mode logic (CML) D triggers by controlling a field effect transistor (FET) load resistor bias voltage to FETs operating in linear regions in load resistors in the CML D triggers. Tail currents of the CML D triggers are controlled to track inversely to a resistor value.