A new family of shared clock single-edge triggered flip-flops that reduces a number of internal clock devices from 8 to 6 devices to reduce clock power. The static pass-gate master-slave flip-flop has no performance penalty compared to the flip-flops with 8 clock devices thus enabling significant power reduction. The flip-flop intelligently maintains the same polarity between the master and slave stages which enables the sharing of the master tristate and slave state feedback clock devices without risk of charge sharing across all combinations of clock and data toggling. Because of this, the state of the flip-flop remains undisturbed, and is robust across charge sharing noise. A multi-bit time borrowing internal stitched flip-flop is also described, which enables internal stitching of scan in a high performance time-borrowing flip-flop without incurring increase in layout area.

Provided are a random number generating device and a method of operating the same. The random number generating device includes a source detector, a pulse generator, a counter, and a verification circuit. The source detector detects particles emitted from a source to generate a detection signal. The pulse generator generates pulses corresponding to the detected particles, based on the detection signal. The counter measures time intervals among the pulses and generates binary count values respectively corresponding to the time intervals. The verification circuit determines an output of the binary count values, based on the number of 0 values and the number of 1 values included in the binary count values.

Techniques are disclosed relating to level-shifting circuitry and time borrowing across voltage domains. In some embodiments, sense amplifier circuitry generates, based on an input signal at a first voltage level, an output signal at a second, different voltage level. Pulse circuitry may generate a pulse signal in response to an active clock edge of a clock signal that is input to the sense amplifier circuitry. Initial resolution circuitry may drive the output signal of the sense amplifier circuitry to match the value of the input signal during the pulse signal. Secondary resolution circuitry may maintain a current value of the output signal after expiration of the pulse signal. This may allow the input signal to change during the pulse, e.g., to enable time borrowing by upstream circuitry.

A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.

A latch array including a row of master latches coupled to columns of slave latches. Each master latch includes an OR-AND-Inverter (OAI) gate cross-coupled with a NAND gate to receive and latch an input data, and each slave latch includes an AND-OR-Inverter (AOI) gate cross-coupled with a NOR gate to receive and latch the data from the master latch, and an inverter including an input coupled to the AOI gate and an output to produce an output data based on the input data. Alternatively, each master latch includes an AND-OR-Inverter (AOI) gate cross-coupled with a NOR gate to receive and latch an input data, and each slave latch includes an OR-AND-Inverter (OAI) gate cross-coupled with a NAND gate to receive and latch the data from the master latch, and an inverter including an input coupled to the OAI gate and an output to produce an output data.

The invention provides a dynamic D flip-flop, and a data operation unit, a chip, a hash board and a computing device using the same. The dynamic D flip-flop comprises: an input terminal, an output terminal and at least one clock signal terminal; a latch unit for latching data of the input terminal and inversely transmitting the data under control of a clock signal; and an output driving unit for inverting and outputting the data received from the latch unit; wherein the latch unit outputs in high level, low level and high impedance states by means of a single element under control of a clock signal. Therefore, the invention can effectively reduce chip area, power consumption, and logic delay.

A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.

A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.