A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

Various techniques are provided to efficiently implement user designs in programmable logic devices (PLDs). In one example, a programmable logic device (PLD) includes a plurality of programmable logic blocks (PLBs) and at least first and second logic cells within at least one of the PLBs, where each logic cell includes a lookup table (LUT) and associated mode logic configured to receive a LUT output signal from the LUT. The associated mode logic is configured to use a single physical signal output to provide a logic cell output signal corresponding to a selected logic function operational mode, ripple arithmetic operational mode, or extended logic function operational mode for each logic cell.

A level shifter is configured to receive an input signal in a first voltage domain and output an output signal in a second voltage domain. An input terminal is configured to receive an input signal in a first voltage domain. A first sensing circuit is configured to shift the input signal from the first voltage domain to the second voltage domain, and a second sensing circuit is configured to shift the input signal from the first voltage domain to the second voltage domain. An enable circuit is configured to equalize a voltage level of first and second output signals at respective first and second output terminals in response to an enable signal. The first and second sensing circuits are configured output complementary output signals in the second voltage domain at the first and second output terminals in response to the enable signal and the input signal.

A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.

A semiconductor device includes: first through fourth active regions spaced apart from one another; a first gate line disposed to overlap with the first and second active regions, but not with the third and fourth active regions, and to extend in a first direction; a second gate line disposed to overlap with the third and fourth active regions, but not with the first and second active regions, and to extend in the first direction while being spaced apart from the first gate line; and a dummy gate line disposed to overlap with the first through fourth active regions and a field region, to be spaced apart from the first and second gate lines in a second direction, and to extend in the first direction, wherein a signal input to the first or second active region is transmitted to the third or fourth active region.

At least some embodiments are directed to a flip-flop that comprises a tri-state inverter and a master latch coupled to the tri-state inverter and comprising a first transistor, a first inverter, and a first logic gate. The master latch receives a clock signal. The flop also comprises a slave latch coupled to the master latch and comprising a second transistor and a second inverter. The slave latch receives the clock signal. The flop further comprises an enablement logic coupled to the master latch and comprising multiple, additional logic gates. The tri-state inverter, the master and slave latches, and the enablement logic are configured so that when a flip-flop input signal D and a flip-flop output signal Q are identical and the clock signal is toggled, a state of the master latch and a state of the slave latch remain static.

Embodiments include apparatuses, methods, and systems for a flip-flop circuit with low-leakage transistors. The flip-flop circuit may be coupled to a logic circuit of an integrated circuit to store data for the logic circuit when the logic circuit is in a sleep state. The flip-flop circuit may pass a data signal for the logic circuit along a signal path. A capacitor may be coupled between the signal path and ground to store a value of the data signal when the logic circuit is in the sleep state. A low-leakage transistor, such as an IGZO transistor, may be coupled between the capacitor and the signal path and may selectively turn on when the logic circuit transitions from the active state to the sleep state to store the value of the data signal in the capacitor. Other embodiments may be described and claimed.

Various techniques are provided to efficiently implement user designs in programmable logic devices (PLDs). In one example, a programmable logic device (PLD) includes a plurality of programmable logic blocks (PLBs) and a plurality of logic cells within at least one of the PLBs, where each logic cell includes a four input lookup table (4-LUT) configured to provide a 4-LUT output signal to associated carry logic. Each logic cell is configurable according to at least two selectable operational modes including a logic function output mode and a ripple arithmetic output mode, and at least three of the 4-LUT inputs are interchangeable when a selected operational mode comprises the ripple arithmetic output mode.

At least some embodiments are directed to a flip-flop that comprises a tri-state inverter and a master latch coupled to the tri-state inverter and comprising a first transistor, a first inverter, and a first logic gate. The master latch receives a clock signal. The flop also comprises a slave latch coupled to the master latch and comprising a second transistor and a second inverter. The slave latch receives the clock signal. The flop further comprises an enablement logic coupled to the master latch and comprising multiple, additional logic gates. The tri-state inverter, the master and slave latches, and the enablement logic are configured so that when a flip-flop input signal D and a flip-flop output signal Q are identical and the clock signal is toggled, a state of the master latch and a state of the slave latch remain static.

A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.