The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows:

##STR00001## where n is 12, 16, 18, 20, or 22, and X is CH.sub.3 or CH.sub.2CH.sub.3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film. Compared with existing ultra-low dielectric thin films, the obtained thin film has a lower dielectric constant (1.89), and is better in dielectric stability in a humid environment, simple to operate, and high in polymerization speed.

Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.

To provide a photosensitive composition capable of easily forming a cured film having a low refractive index. The present invention provides a photosensitive siloxane composition comprising: a polysiloxane, a photosensitive agent, hollow silica particles, and a solvent. The hollow silica particles contain voids inside, and have outer surfaces subjected to hydrophobic treatment.

A spin-on glass (SOG) depositing system includes a suck back (SB) valve arranged to receive SOG. The SOG depositing system further includes a SOG dispenser having a nozzle, the SOG dispenser coupled with the SB valve for receiving SOG. The SOG depositing system further includes a detector positioned to detect SOG outside the nozzle. The SOG depositing system further includes an SB valve controller coupled with the detector for receiving one or more signals from the detector and coupled with the SB valve for controlling operation of the SB valve, wherein the SB valve controller is configured to pause sensing by the detector based on the sensed amount of SOG outside the nozzle being outside at least one operating parameter.

A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.

A device and method for dispensing liquid spin-on glass (SOG) onto semiconductor wafers. The method includes dispensing liquid SOG through a dispenser nozzle, detecting liquid SOG outside of the dispenser nozzle, indicating the presence of liquid SOG in an abnormal length relative to the dispenser nozzle and adjusting a suck back (SB) valve to withdraw liquid SOG from the abnormal length.

A silsesquioxane-containing composition comprising a silsesquioxane resin and a silyl-anhydride of formula (II) (see description), products prepared therefrom, photoresist compositions comprising the silsesquioxane-containing composition and a photoacid generator, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same.