Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

There is provided a technique that includes (a) forming a first film on the substrate by supplying a film-forming agent to the substrate; (b) adding oxygen to the first film by supplying a first oxidizing agent to the substrate and oxidizing a part of the first film; and (c) changing the oxygen-added first film into a second film including an oxide film by supplying a second oxidizing agent to the substrate and oxidizing the oxygen-added first film.

Compositions and methods using same are used for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. The silicon-containing film is deposited using an alkylhydridosilane compound containing at least one Si—H bond.

Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.

A semiconductor device of embodiments includes: a semiconductor layer; a first insulating layer provided on the semiconductor layer; a first metal layer provided on the first insulating layer and containing aluminum (Al); a second metal layer provided on the first insulating layer and containing aluminum (Al); and a second insulating layer provided on the first insulating layer, provided between the first metal layer and the second metal layer, having a top surface in contact with a side surface of the first metal layer and a side surface of the second metal layer, and containing silicon (Si) and nitrogen (N).

Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.

A semiconductor device structure is provided. The semiconductor device includes a first nanowire structure over a second nanowire structure, a gate stack wrapping around the first nanowire structure and the second nanowire structure, a source/drain feature adjoining the first nanowire structure and the second nanowire structure, a gate spacer layer over the first nanowire structure and between the gate stack and the source/drain feature, and an inner spacer layer between the first nanowire structure and the second nanowire structure and between the gate stack and the source/drain feature. The gate spacer layer has a first carbon concentration, the inner spacer has a second carbon concentration, and the second carbon concentration is lower than the first carbon concentration.