A solar cell, a manufacturing method therefor, and a photovoltaic module are provided. The solar cell includes a substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer, a first passivation layer and a second passivation layer. The first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content and a silicon content at the second interface are higher than those at the first interface and the third interface, respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface, respectively.

In an embodiment, a method for nitriding a substrate is provided. The method includes flowing a nitrogen-containing source and a carrier gas into a plasma processing source coupled to a chamber such that a flow rate of the nitrogen-containing source is from about 3% to 20% of a flow rate of the carrier gas; generating an inductively-coupled plasma (ICP) in the plasma processing source by operating an ICP source, the ICP comprising a radical species formed from the nitrogen-containing source, the carrier gas, or both; and nitriding the substrate within the chamber, wherein nitriding includes operating a heat source within the chamber at a temperature from about 150° C. to about 650° C. to heat the substrate; maintaining a pressure of the chamber from about 50 mTorr to about 2 Torr; introducing the ICP to the chamber; and adjusting a characteristic of the substrate by exposing the substrate to the radical species.

A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.

The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

There is provided a technique having a process that includes forming a film, which contains a first element and a second element on a substrate by performing a cycle a predetermined number of times, the cycle sequentially performing: (a) supplying a first precursor gas containing the first element to the substrate in a process chamber; (b) supplying a second precursor gas, which contains the first element and has a pyrolysis temperature lower than a pyrolysis temperature of the first precursor gas, to the substrate; and (c) supplying a reaction gas, which contains the second element that is different from the first element, to the substrate.

A method for manufacturing a semiconductor device is provided. The method includes the following. A substrate is provided. A stacked structure is formed on the substrate. The stacked structure includes first material layers and gate layers that are alternatively stacked. The stacked structure includes a giant block (GB) region and a stair-step region. A third material layer is formed on an upper surface of the GB region and an upper surface of the stair-step region. A fourth material layer filling the stair-step region and covering the GB region is formed. At least one contact structure is located in the stair-step region. Each of the at least one contact structure penetrates the third material layer and is connected with a respective one of the gate layers.

Embodiments of the disclosure include methods of forming a film comprising conformally depositing a first film on a substrate; treating the first film with a first plasma to form a second film; treating the second film with a second plasma to form a third film; and selectively removing the first film, a portion of the second film, and the third film.

A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

The present application discloses a semiconductor device with the flowable layer. The semiconductor device includes a substrate, a first isolation layer positioned in the substrate, a first treated flowable layer positioned between the first isolation layer and the substrate, a second isolation layer positioned in the substrate, and a second treated flowable layer positioned between the second isolation layer and the substrate. A width of the first isolation layer is greater than a width of the second isolation layer, and a depth of the first isolation layer is less than a depth of the second isolation layer.