A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.

A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe.sub.2).sub.3, Zr(EtCp)(NMe.sub.2).sub.3, ZrCp(NMe.sub.2).sub.3, Zr(MeCp)(NEtMe).sub.3, Zr(EtCp)(NEtMe).sub.3, ZrCp(NEtMe).sub.3, Zr(MeCp)(NEt.sub.2).sub.3, Zr(EtCp)(NEt.sub.2).sub.3, ZrCp(NEt.sub.2).sub.3, Zr(iPr.sub.2Cp)(NMe.sub.2).sub.3, Zr(tBu.sub.2Cp)(NMe.sub.2).sub.3, Hf(MeCp)(NMe.sub.2).sub.3, Hf(EtCp)(NMe.sub.2).sub.3, HfCp(NMe.sub.2).sub.3, Hf(MeCp)(NEtMe).sub.3, Hf(EtCp)(NEtMe).sub.3, HfCp(NEtMe).sub.3, Hf(MeCp)(NEt.sub.2).sub.3, Hf(EtCp)(NEt.sub.2).sub.3, HfCp(NEt.sub.2).sub.3, Hf(iPr.sub.2Cp)(NMe.sub.2).sub.3, Hf(tBu.sub.2Cp)(NMe.sub.2).sub.3, and mixtures thereof; and depositing the dielectric film on the substrate.

A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.

A preparation method for the capacitor structure includes: forming a dielectric layer on a first electrode, wherein, the dielectric layer includes a first amorphous layer and a high dielectric constant layer which are stacked, the first amorphous layer maintaining an amorphous structure after annealing, and the high dielectric constant layer being formed by crystallizing an initial dielectric constant layer after annealing; and forming a second electrode on the dielectric layer. Since the first amorphous layer remains an amorphous structure after annealing, electron transport can be suppressed, thereby reducing the leakage current of the capacitor structure.