A method for fabricating a capacitor includes forming a first electrode, forming a dielectric layer stack on the first electrode, the dielectric layer stack including an initial hafnium oxide layer and a seed layer having a doping layer embedded therein, forming a thermal source layer on the dielectric layer stack to crystallize the initial hafnium oxide into tetragonal hafnium oxide, and forming a second electrode on the thermal source layer.

According to one embodiment of the present invention, a method of forming a thin film using a surface protection material, the method comprising: supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film, wherein before forming the thin film, the method further comprises: supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and purging the interior of the chamber.

A semiconductor device according to the present disclosure includes a first source/drain feature, a second source/drain feature, a third source/drain feature, a first dummy fin disposed between the first source/drain feature and the second source/drain feature along a direction to isolate the first source/drain feature from the second source/drain feature, and a second dummy fin disposed between the second source/drain feature and the third source/drain feature along the direction to isolate the second source/drain feature from the third source/drain feature. The first dummy fin includes an outer dielectric layer, an inner dielectric layer over the outer dielectric layer, and a first capping layer disposed over the outer dielectric layer and the inner dielectric layer. The second dummy fin includes a base portion and a second capping layer disposed over the base portion.

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and an isolation region that impedes the transfer of charge carriers along the surface of the handle substrate and reduces parasitic coupling between RF devices.

There is provided a technique that includes forming a film containing a first element and oxygen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a modifying agent to the substrate to form, on the substrate, an adsorption layer containing the modifying agent physically adsorbed on a surface of the substrate; (b) supplying a precursor containing the first element to the substrate and causing the precursor to react with the surface of the substrate to form a first layer containing the first element on the substrate; and (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.

A porous thin film includes a framework that includes a plurality of pores. The pores extend from an opening located at an upper surface of the framework to a bottom surface contained in the framework. A pore-coating film is formed on sidewalls and the bottom surface of the pores.

The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

An air gap forming method of forming an air gap in a gap structure having an upper surface, a lower surface, and a sidewall connecting the upper and lower surface, includes: repeatedly performing a selective deposition cycle, wherein the selective deposition cycle includes supplying a deposition inhibitor onto a substrate including the gap structure; and selectively forming a material layer on the upper surface compared to the sidewall.

Various aspects relate to a functional layer and the formation thereof. A method for manufacturing a functional layer of an electronic device may include: forming a plurality of sublayers of the functional layer by a plurality of consecutive sublayer processes, each sublayer process of the plurality of consecutive sublayer processes comprising: forming a sublayer of the plurality of sublayers by vapor deposition, the sublayer comprising one or more materials, and, subsequently, crystallizing the one or more materials comprised in the sublayer.

A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.