A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

Method of manufacturing a semiconductor device is described that uses sidewall protection of a recessed feature to prevent loss of critical dimension during a cleaning process to remove etch residue. According to one embodiment, the method includes providing a substrate containing a film thereon having a recessed feature with a sidewall and a bottom portion, depositing a conformal film on the sidewall and on the bottom portion, removing the conformal film from the bottom portion in an anisotropic etching process, where the remaining conformal film forms a protection film on the sidewall, and performing a cleaning process that removes etch residue from the recessed feature without etching the protection film or the sidewall.

An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.

Embodiments of the invention provide a wrap-around contact integration scheme that includes sidewall protection during contact formation. A substrate processing method includes providing a substrate containing a raised contact in a first dielectric film, and a second dielectric film on the first dielectric film, where the second dielectric film has a recessed feature with a sidewall and a bottom portion above the raised contact. The method further includes depositing a conformal film on the sidewall and on the bottom portion of the recessed feature, removing the conformal film from the bottom portion in a first anisotropic etching process, where the remaining conformal film forms a protection film on the sidewall and defines a width of the recessed feature, and forming a cavity containing the raised contact in an isotropic etching process, where a width of the cavity is greater than the width of the recessed feature.

A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrO.sub.2 film of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrO.sub.2 film and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.

A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.