Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

A semiconductor device is provided, which includes providing an active region, a source region, a drain region, a dielectric layer, a gate structure and a nitrogen-infused dielectric layer. The source region and the drain region are formed in the active region. The dielectric layer is disposed over the source region and the drain region. The gate structure formed in the dielectric layer is positioned between the source region and the drain region. The nitrogen-infused dielectric layer is disposed over the dielectric layer and over the gate structure.

Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO.sub.2 film on the metal-containing catalyst layer on the dielectric material.

There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.

Various embodiments relate to an electronic device including a substrate comprising a semiconductor or polymeric inhibit and a barrier comprising one or more monolayer amorphous films over the substrate, wherein the barrier is configured to or reduce permeation of moisture or gas from environment to the substrate. Various embodiments relate to an electronic device comprising a first device structure including an electrically conductive material, a second device structure including a further electrically conductive material or a semiconductor material, and a barrier including one or more monolayer amorphous films between the first device structure and the second device structure, wherein the barrier is configured to inhibit or reduce interdiffusion between the first device structure and the second device structure. In specific embodiments, the electronic device is an organic light emitting diode (OLED) or a thin film transistor (TFT), and the monolayer amorphous films are monolayer amorphous carbon (MAC) films.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.

The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.

A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.