A method of manufacturing a semiconductor device is provided. A precursor structure is formed, in which the precursor structure includes a patterned substrate having at least one trench therein, an oxide layer covering the patterned substrate, and a nitride layer on the oxide layer and exposing a portion of the oxide layer in the trench. A first barrier layer and a first gate structure is formed on the oxide layer. A portion of the first barrier layer is removed with an etchant including CF.sub.4, C.sub.2F.sub.6, C.sub.3F.sub.8, C.sub.4F.sub.8, F.sub.2, NF.sub.3, SF.sub.6, CHF.sub.3, HF, COF.sub.2, ClF.sub.3 or H.sub.2O.sub.2 to expose a sidewall of the oxide layer. A second barrier layer is formed on the first gate structure and the oxide layer. A portion of the second barrier layer is removed with the etchant. A second gate structure is formed on the second barrier layer.

An integrated chip comprises a substrate, an isolation structure and a gate structure. The isolation structure comprises one or more dielectric materials within the substrate and has sidewalls defining an active region in the substrate. The active region has a channel region, a source region, and a drain region separated from the source region by the channel region along a first direction. The source, drain and channel regions respectively have first, second and third widths along a second direction perpendicular to the first direction. The third width is larger than the first and second widths. The gate structure comprises a first gate electrode region having a first composition of one or more materials and a second gate electrode region having a second composition of one or more materials different than the first composition of one or more materials.

Example embodiments relate to field-effect transistors. An example field-effect transistor includes a plurality of field-effect transistor elements, each field-effect transistor element including a gate finger and a gate runner. The gate finger of each field-effect transistor element is electrically connected at a plurality of spaced apart positions to the gate runner of that element. Each gate finger is made of a first material or material composition and has a first electrical resistivity. The field-effect transistor further includes, for each gate finger, a gate resistor through which the electrical connection between the gate finger and the gate runner at a position among the plurality of spaced apart positions is realized. The gate resistor is made of a second material or material composition and has a second electrical resistivity that is higher than the first electrical resistivity.

A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure protruding therefrom, an insulating layer is over the substrate to cover the fin structure, a gate structure in the insulating layer and over the fin structure, and source and drain features covered by the insulating layer and over the fin structure on opposing sidewall surfaces of the gate structure. The gate structure includes a gate electrode layer, a conductive sealing layer covering the gate electrode layer, and a gate dielectric layer between the fin structure and the gate electrode layer and surrounding the gate electrode layer and the conductive sealing layer. The gate electrode layer has a material removal rate that is higher than the material removal rate of the conductive sealing layer in a chemical mechanical polishing process.

A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.

The present disclosure relates to an integrated chip. The integrated chip includes a source region and a drain region disposed within an upper surface of a substrate. One or more dielectric materials are disposed within a trench defined by sidewalls of the substrate that surround the source region and the drain region. The one or more dielectric materials include one or more interior surfaces defining a recess within the one or more dielectric materials. A gate structure is disposed over the substrate between the source region and the drain region. The gate structure includes a first gate material over the upper surface of the substrate and a second gate material. The second gate material completely fills the recess as viewed along a cross-sectional view.

A method for fabricating a semiconductor device includes: forming a gate structure including a source side and a drain side over a substrate, wherein a dielectric material and a columnar crystal grain material are stacked over the substrate; doping a chemical species on the drain side of the gate structure; and exposing the gate structure doped with the chemical species to a re-growth process in order to thicken the dielectric material on the drain side of the gate structure.

An embodiment of the invention may include a method for of forming a semiconductor device and the resulting device. The method may include forming a gate dielectric on a gate region of a substrate. The method may include forming an inner dummy gate on a first portion of the gate dielectric. The method may include forming an outer dummy gate adjacent to the inner dummy gate on a second portion of the gate dielectric. The method may include forming spacers adjacent to the outer dummy gate. The method may include removing the outer dummy gate and depositing a first work function metal. The method may include removing the inner dummy gate and depositing a second work function metal.

The present disclosure relates to an integrated chip. The integrated chip includes a source region and a drain region disposed within an upper surface of a substrate. One or more dielectric materials are disposed within a trench within the substrate. The trench surrounds the source region and the drain region. A gate structure is disposed over the substrate between the source region and the drain region. The gate structure includes a first gate metal having a first sidewall and a second gate metal having a first outer sidewall that contacts the first sidewall directly over the upper surface of the substrate.