A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.

A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.

A package structure includes: a substrate; a chip arranged on a part of a surface of the substrate; a metal thermal conducting layer arranged on a top surface of the chip; a capacitive structure arranged on another part of the surface of the substrate and arranged to be independent from the chip; and a cover including a first cover layer and a second cover layer connected to the first cover layer. A first opening is defined to extend through the first and the second cover layers. The second cover layer is arranged on a bottom of the first cover layer and perpendicular to the first cover layer. The first cover layer is arranged on the capacitive structure. The chip is received in the first opening. The second cover layer is arranged between the capacitive structure and the chip, and is fixed to the substrate.

A package manufacturing process and semiconductor packages are provided. An interposer having a crystal structure is provided. A first die and a second die are bonded on the interposer. The second die is positioned to be spaced apart from the first die with a gap extending direction that is perpendicular to a shortest distance of the gap, and the gap extending direction is not parallel with a crystallographic orientation of the crystal structure of the interposer. A molding compound is formed over the interposer covering the first and second dies. The molding compound and the interposer are cut into packages.

A method for assembling an optoelectronic package assembly includes engaging a connector holder with a substrate, the connector holder defining an engagement feature and the substrate including optical waveguides, engaging a connector of a fiber array unit with the engagement feature the connector holder where the engagement feature retains the connector and where the fiber array unit includes the connector and optical fibers coupled to the connector, optically coupling the optical fibers to the optical waveguides of the substrate, heating the connector holder, the fiber array unit, the substrate, and a solder positioned between the substrate and a base substrate, where the heating is sufficient to melt the solder, and cooling the solder to couple the substrate to the base substrate.

A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.

A ball grid array (BGA) including at least one BGA chip and a plurality of solder balls directly connected to a substrate, such as a printed circuit board (PCB), where the solder balls include an epoxy. A method for producing a BGA package including providing a BGA having a plurality of epoxy-containing solder balls, positioning the BGA on a substrate, such as a PCB, and applying heat to reflow the epoxy-containing solder balls and to create a connection between the BGA and the PCB.

An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10.sup.−6 m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.

A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

Input/output pins for a chip-embedded substrate may be fabricated by applying a contact-distinct volume of solder to at least two contacts that are recessed within the chip-embedded substrate, temperature-cycling the chip-embedded substrate to induce solder reflow and define an input/output pin for each one of the at least two contacts, and machining the input/output pin for each one of the at least two contacts to extend exposed from the chip-embedded substrate to a common height within specification tolerance. Such a technique represents a paradigm shift in that the manufacturer of the chip-embedded substrate, as opposed to the immediate customer of the manufacturer, may assume the burden of quality control with respect to minimizing unintended solder void trapping under the input/output pins, thereby reinforcing existing customer loyalty and potentially attracting new customers.