Provided is a layout configuration that helps facilitate manufacturing a semiconductor integrated circuit device including a nanowire FET. A nanowire FET in a standard cell includes Na (where Na is an integer of 2 or more) nanowires extending in an X direction, and a nanowire FET in a standard cell includes Nb (where Nb is an integer of 1 or more and less than Na) nanowires extending in the X direction. At least one of both ends, in the Y direction, of a pad of the nanowire FET is aligned in the X direction with an associated one of both ends, in the Y direction, of a pad of the nanowire FET.

An integrated circuit device includes a first device and a second device. The first device is disposed within a first circuit region, the first device including a plurality of first semiconductor strips extending longitudinally in a first direction. Adjacent ones of the plurality of first semiconductor strips are spaced apart from each other in a second direction, which is generally perpendicular to the first direction. The second device is disposed within a second circuit region, the second circuit region being adjacent to the first circuit region in the first direction. The second device includes a second semiconductor strip extending longitudinally in the first direction. A projection of a longitudinal axis of the second semiconductor strip along the first direction lies in a space separating the adjacent ones of the plurality of first semiconductor strips.

An integrated circuit structure includes: an integrated circuit structure includes: a first plurality of cell rows extending in a first direction, and a second plurality of cell rows extending in the first direction. Each of the first plurality of cell rows has a first row height and comprises a plurality of first cells disposed therein. Each of the second plurality of cell rows has a second row height different from the first row height and comprises a plurality of second cells disposed therein. The plurality of first cells comprises a first plurality of active regions each of which continuously extends across the plurality of first cells in the first direction. The plurality of second cells comprises a second plurality of active regions each of which continuously extends across the plurality of second cells in the first direction. At least one active region of the first and second pluralities of active regions has a width varying along the first direction.

A semiconductor device is provided. The semiconductor device includes a first hard macro; a second hard macro spaced apart from the first hard macro in a first direction by a first distance; a head cell disposed in a standard cell area between the first hard macro and the second hard macro, the head cell being configured to perform power gating of a power supply voltage provided to one from among the first hard macro and the second hard macro; a plurality of first ending cells disposed in the standard cell area adjacent to the first hard macro; and a plurality of second ending cells disposed in the standard cell area adjacent to the second hard macro, the head cell not overlapping the plurality of first ending cells and the plurality of second ending cells.

A semiconductor device includes a first standard cell and a second standard cell. A single diffusion break region extending in a first direction is formed in the first standard cell, and a first edge region extending in the first direction and having a maximum cutting depth in a depth direction perpendicular to the first direction is in the first standard cell. A double diffusion break region extending in the first direction is formed in the second standard cell, and a second edge region extending in the first direction and having the maximum cutting depth in the depth direction is formed in the second standard cell.

Various implementations described herein are directed to device having a regular well cell and a flipped well cell. The regular well cell has a first N-well and a first P-well, and the flipped well cell has a second N-well and a second P-well in complementary relationship with the first N-well and the first P-well of the regular well cell. The device includes a bridge cell disposed between the regular well cell and the flipped well cell.

An integrated circuit includes a first cell and a second cell. The first cell with a first cell height along a first direction includes a first active region and a second active region that extend in a second direction different from the first direction. The first active region overlaps the second active region in a layout view. The second cell with a second cell height includes a first plurality of active regions and a second plurality of active regions. The first plurality of active regions and the second plurality of active regions extend in the second direction and the first plurality of active regions overlap the second plurality of active regions, respectively, in the layout view. The first cell abuts the second cell, and the first active region is aligned with one of the first plurality of active regions in the layout view.

A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

A computer-implemented method of cell placement is provided. The method includes representing a non-rectangular cell to be placed into a cell row and searching the cell row to identify existing objects that are representative of cells in the cell row that are disposable to share space with the non-rectangular cell. The method further includes determining whether a representation of the non-rectangular cell is fittable into a modified mapping of the existing objects in the cell row and, in an event the representation is fittable into the modified mapping, overlapping the representation over one or more of the portions of the existing objects.