A standard cell for use within an integrated circuit can be partially personalized by local wiring. The standard cell can include a set of transistors, each having a fixed size and position within an established standard cell perimeter. The set of transistors can be partially interconnected to a set of local nodes by local wiring. Customization ports can be arranged on a global wiring layer and electrically connected to the set of local nodes. A set of blockage in shapes can be arranged to identify, on a global wiring layer, areas reserved for personalization wiring. Personalization wiring can be configured to complete the personalization of the standard cell by electrically interconnecting, on the global wiring layer, some of the set of customization ports.

A MOS device of an IC includes pMOS and nMOS transistors. The MOS device further includes a first M.sub.x layer interconnect extending in a first direction and coupling the pMOS and nMOS transistor drains together, and a second M.sub.x layer interconnect extending in the first direction and coupling the pMOS and nMOS transistor drains together. The first and second M.sub.x layer interconnects are parallel. The MOS device further includes a first M.sub.x+1 layer interconnect extending in a second direction orthogonal to the first direction. The first M.sub.x+1 layer interconnect is coupled to the first M.sub.x layer interconnect and the second M.sub.x layer interconnect. The MOS device further includes a second M.sub.x+1 layer interconnect extending in the second direction. The second M.sub.x+1 layer interconnect is coupled to the first M.sub.x layer interconnect and the second M.sub.x layer interconnect. The second M.sub.x+1 layer interconnect is parallel to the first M.sub.x+1 layer interconnect.

A standard cell for use within an integrated circuit can be partially personalized by local wiring. The standard cell can include a set of transistors, each having a fixed size and position within an established standard cell perimeter. The set of transistors can be partially interconnected to a set of local nodes by local wiring. Customization ports can be arranged on a global wiring layer and electrically connected to the set of local nodes. A set of blockage in shapes can be arranged to identify, on a global wiring layer, areas reserved for personalization wiring. Personalization wiring can be configured to complete the personalization of the standard cell by electrically interconnecting, on the global wiring layer, some of the set of customization ports.

An integrated circuit, in the form of a wafer, die, or chip, includes multiple standard cell-compatible fill cells, configured to enable non-contact electrical measurements. Such fill cells include mesh pads that contain at least three conductive stripes disposed between adjacent gate stripes. Such fill cells further include geometry to enable non-contact evaluation of side-to-side shorts and/or leakages.

A method of fabricating an integrated circuit includes fabricating a set of transistors in a front-side of a substrate, depositing a first conductive material over the set of transistors on a first level thereby forming a set of contacts for the set of transistors, fabricating a first set of vias over the set of transistors, depositing a second conductive material over the set of contacts on a second level thereby forming a set of power rails, depositing a third conductive material over the set of contacts on the second level thereby forming a first set of conductors, and depositing a fourth conductive material over the set of contacts on the second level thereby forming a second set of conductors. The set of power rails and the first set of conductors have the first width. The second set of conductors has a second width different from the first width.

A standard cell for use within an integrated circuit can be partially personalized by local wiring. The standard cell can include a set of transistors, each having a fixed size and position within an established standard cell perimeter. The set of transistors can be partially interconnected to a set of local nodes by local wiring. Customization ports can be arranged on a global wiring layer and electrically connected to the set of local nodes. A set of blockage in shapes can be arranged to identify, on a global wiring layer, areas reserved for personalization wiring. Personalization wiring can be configured to complete the personalization of the standard cell by electrically interconnecting, on the global wiring layer, some of the set of customization ports.

A standard cell for use within an integrated circuit can be partially personalized by local wiring. The standard cell can include a set of transistors, each having a fixed size and position within an established standard cell perimeter. The set of transistors can be partially interconnected to a set of local nodes by local wiring. Customization ports can be arranged on a global wiring layer and electrically connected to the set of local nodes. A set of blockage in shapes can be arranged to identify, on a global wiring layer, areas reserved for personalization wiring. Personalization wiring can be configured to complete the personalization of the standard cell by electrically interconnecting, on the global wiring layer, some of the set of customization ports.

A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOES), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The first DOE contains fill cells configured to enable non-contact (NC) detection of tip-to-side shorts, and the second DOE contains fill cells configured to enable NC detection of chamfer shorts. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.

An integrated circuit, in the form of a wafer, die, or chip, includes multiple standard cell-compatible fill cells, configured to enable non-contact electrical measurements. Such fill cells include mesh pads that contain at least three conductive stripes disposed between adjacent gate stripes. Such fill cells further include geometry to enable non-contact evaluation of snake opens and/or resistances.

A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOEs), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (NCEM). The first DOE contains fill cells configured to enable non-contact (NC) detection of side-to-side shorts, and the second DOE contains fill cells configured to enable NC detection of chamfer shorts. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.