A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); a predetermined signal line (w1) arranged in the wiring layer of the quantum chip (111); first shield wires (ws1) arranged in the wiring layer of the quantum chip (111) along the predetermined signal line (w1); a second shield wire (ws2) arranged in the wiring layer of the interposer (112); and a second connection part (150) that is provided between the interposer (112) and the quantum chip (111) so as to contact the first shield wires (ws1) and the second shield wire (ws2).

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.

Disclosed embodiments include a semiconductor chip including a semiconductor substrate having a top surface with a top connection pad disposed therein, and a protection insulation layer comprising an opening therein, the protection insulation layer not covering at least a portion of the top connection pad, on the semiconductor substrate. The protection insulation layer may include: a bottom protection insulation layer, a cover insulation layer comprising a side cover part that covers at least a portion of a side surface of the bottom protection insulation layer and a top cover part disposed apart from the side cover part to cover at least a portion of a top surface of the bottom protection insulation layer. The protection insulation layer may further include a top protection insulation layer on the top cover part.

A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad. The semiconductor device also includes a dielectric liner disposed between the first spacer and the bonding pad; and a first passivation layer covering the second spacer, wherein the dielectric liner is L-shaped, and the first spacer is separated from the bonding pad by the dielectric liner.

Disclosed embodiments include a semiconductor chip including a semiconductor substrate having a top surface with a top connection pad disposed therein, and a protection insulation layer comprising an opening therein, the protection insulation layer not covering at least a portion of the top connection pad, on the semiconductor substrate. The protection insulation layer may include: a bottom protection insulation layer, a cover insulation layer comprising a side cover part that covers at least a portion of a side surface of the bottom protection insulation layer and a top cover part disposed apart from the side cover part to cover at least a portion of a top surface of the bottom protection insulation layer. The protection insulation layer may further include a top protection insulation layer on the top cover part.

A prepreg is used to fabricate a semiconductor package including a chip and a substrate to mount the chip thereon. The prepreg is in a semi-cured state. The substrate includes a cured product of the prepreg. The chip has: a first chip surface located opposite from the substrate; and a second chip surface located opposite from the first chip surface. The prepreg satisfies the relational expression: 0.9≤X.sub.2/X.sub.1≤1.0 (I), where X.sub.1 is a coefficient of thermal expansion of the first chip surface of the chip before the chip is mounted on the substrate, and X.sub.2 is a coefficient of thermal expansion of the first chip surface of the chip after the chip has been mounted on the substrate.

Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.

The present application provides a semiconductor device. The semiconductor device includes a bonding pad disposed over a semiconductor substrate; a first spacer disposed over a top surface of the bonding pad; a second spacer disposed over a sidewall of the bonding pad; a dielectric layer between the bonding pad and the semiconductor substrate. The dielectric layer includes silicon-rich oxide; and a conductive bump disposed over the first passivation layer. The conductive bump is electrically connected to a source/drain (S/D) region in the semiconductor substrate through the bonding pad.