A semiconductor element includes: an element body including an obverse surface facing a first side in a thickness direction z; a wiring layer formed on the obverse surface and electrically connected to the element body; an insulating layer covering the obverse surface and the wiring layer, and including a first opening through which the wiring layer is exposed; a surface protection film covering the insulating layer, and including a second opening through which the wiring layer is exposed; and a metal layer in contact with the wiring layer via the first opening and the second opening, and overlapping with the surface protection film as viewed in the thickness direction z. An outer edge of the metal layer is curved as viewed in the thickness direction z.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.

A method includes forming an optical interposer, comprising: forming an optical device layer over a front-side of a first substrate, the optical device layer comprising a grating coupler; forming a first interconnect structure over the optical device layer, the first interconnect structure comprising conductive features and dielectric layers; etching an opening through the dielectric layers to expose the grating coupler; filling the opening with an oxide layer; forming a first bond layer over a back-side of the first substrate, the first bond layer comprising first bond pads and a first dielectric bond layer; and attaching a semiconductor device to the optical interposer, the semiconductor device comprising: an active device layer over a front-side of a second substrate; a second interconnect structure over the active device layer; and a second bond layer over the second interconnect structure, the second bond layer comprising second bond pads and a second dielectric bond layer.

The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto first areas of a seed structure and depositing a second material over the first material. The first material has first electrical potential and the second material has a second electrical potential greater than the first electrical potential. The method further comprises reducing the difference in the electrical potential between the first material and the second material, and then removing second areas of the seed structure between the UBM pillars thereby forming UBM structures on the semiconductor die.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

A semiconductor device includes: a first semiconductor element including a first face and a second face; a second semiconductor element including a third face and a fourth face; an insulating base member including a fifth face and a sixth face; a first wiring that penetrates through the insulating base member, and is disposed on the sixth face; a second wiring that penetrates through the insulating base member, and is disposed on the sixth face; a first wiring member that faces the second face; and a second wiring member that faces the sixth face, and is electrically connected to the second wiring. The second wiring member is bonded to the first and second wirings while the insulating base member is folded. A current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the second wiring member.