Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

A method of forming a bonded assembly includes providing a first semiconductor die containing and first metallic bonding structures and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures, providing a second semiconductor die containing second metallic bonding structures, disposing the second semiconductor die in contact with the first semiconductor die, and annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.

A method of forming a bonded assembly includes providing a first semiconductor die containing and first metallic bonding structures and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures, providing a second semiconductor die containing second metallic bonding structures, disposing the second semiconductor die in contact with the first semiconductor die, and annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

A semiconductor package including a first semiconductor chip having a first thickness, a second semiconductor chip on the first semiconductor chip and having a second thickness, the second thickness being smaller than the first thickness, a third semiconductor chip on the second semiconductor chip and having a third thickness, the third thickness being smaller than the second thickness, a fourth semiconductor chip on the third semiconductor chip and having a fourth thickness, the fourth thickness being greater than the third thickness, and a fifth semiconductor chip disposed on the fourth semiconductor chip and having a fifth thickness, the fifth thickness being greater than the fourth thickness may be provided.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

Disclosed is a method for transient liquid-phase bonding between metal materials using a magnetic force. In particular, in the method, a magnetic force is applied to a transient liquid-phase bonding process, thereby shortening a transient liquid-phase bonding time between the metal materials, and obtaining high bonding strength. To this end, an attractive magnetic force is applied to a ferromagnetic base while a repulsive magnetic force is applied to a diamagnetic base, thereby to accelerate diffusion. This may reduce a bonding time during a transient liquid-phase bonding process between two bases and suppress formation of Kirkendall voids and voids and suppress a layered structure of an intermetallic compound, thereby to increase a bonding strength.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, at least one insert may be provided at a location in a space formed between the first object and the second object. In additional, a filler material may be provided proximal to the location. An inter-diffusion layer may be formed, wherein a first portion of the inter-diffusion layer is formed by diffusion between the filler material and the at least one insert, wherein a second portion of the inter-diffusion layer is formed between the filler material and the first object, wherein a third portion of the inter-diffusion layer is formed between the filler material and the second object, wherein the first portion is coadunate with each of the second portion and third portion.