A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.

Some embodiments include a method of forming integrated circuitry. A first assembly is formed to have a first dielectric material, a first conductive pad and a conductive structure. The first assembly has a first surface which includes a surface of the first dielectric material, a surface of the first conductive pad and a surface of the conductive structure. A second assembly is formed to have a second dielectric material and a second conductive pad. The second assembly has a second surface which includes a surface of the second dielectric material and a surface of the second conductive pad. The first surface is placed directly against the second surface. The surface of the first dielectric material is bonded with the surface of the second dielectric material, and the surface of the first conductive pad is bonded with the surface of the second conductive pad.

Some embodiments include a method of forming integrated circuitry. A first assembly is formed to have a first dielectric material, a first conductive pad and a conductive structure. The first assembly has a first surface which includes a surface of the first dielectric material, a surface of the first conductive pad and a surface of the conductive structure. A second assembly is formed to have a second dielectric material and a second conductive pad. The second assembly has a second surface which includes a surface of the second dielectric material and a surface of the second conductive pad. The first surface is placed directly against the second surface. The surface of the first dielectric material is bonded with the surface of the second dielectric material, and the surface of the first conductive pad is bonded with the surface of the second conductive pad.

A substrate comprising a solid glass core having a first surface and a second surface opposed to the first surface; multiple conductors extending through the solid glass core beginning at the first surface and ending at the second surface, wherein one of the conductors has a third surface and a fourth surface, wherein the third surface and the first surface are substantially coplanar, wherein the second surface and the fourth surface are substantially coplanar, wherein one of the conductors comprise a copper-tungsten alloy material, wherein the solid glass core is directly contact with the conductor; and a first dielectric layer and a first metal layer formed at the first surface, wherein the first metal layer at the first surface is electrically coupled with one of the conductors.

A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.

The present disclosure provides a display panel and a display device. A distance from a surface of a first conductive adhesive layer close to a first pin, electrically connecting the first conductive pad and the first pin, to the substrate is different from a distance of a surface of a second conductive adhesive layer electrically connected to the second conductive pad and the second pin to the substrate, to compensate for a height difference caused by the partial warpage of the pins on the drive chip when binding a drive chip, so as to ensure that the drive chip can be well bonded to the display panel.

A method of bonding substrates comprises depositing a fluorine-doped dielectric layer on a first substrate, exposing the fluorine-doped dielectric layer to a hydrogen-containing plasma, and directly bonding the fluorine-doped dielectric layer to a surface of a second substrate without the use of an intervening adhesive.

The present disclosure provides a display panel and a display device. The display panel includes a substrate, a first conductive pad, a second conductive pad, and a driving chip. The substrate includes a bearing surface. The first conductive pad is disposed on the bearing surface of the substrate and located at a pad area. The second conductive pad is disposed on the bearing surface of the substrate and located at the pad area. The driving chip is bonded to the pad area and includes a first pin and a second pin. The first pin is disposed corresponding to the first conductive pad and electrically connected to the first conductive pad. The second pin is disposed corresponding to the second conductive pad and electrically connected to the second conductive pad. A thickness of the first pin is different from a thickness of the second pin.