An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

A semiconductor die (“die”) employing repurposed seed layer for forming additional signal paths to a back end-of-line (BEOL) structure of the die, and related integrated circuit (IC) packages and fabrication methods. A seed layer is repurposed that was disposed adjacent the BEOL interconnect structure to couple an under bump metallization (UBM) interconnect without a coupled interconnect bump thus forming an unraised interconnect bump, to a UBM interconnect that has a raised interconnect bump. To couple the unraised interconnect bump to the raised interconnect bump, the seed layer is selectively removed during fabrication to leave a portion of the seed layer repurposed that couples the UBM interconnect that does not have an interconnect bump to the UBM interconnect that has a raised interconnect bump. Additional routing paths can be provided between raised interconnect bumps to the BEOL interconnect structure through coupling of UBM interconnects to an unraised interconnect bump.

A semiconductor device includes a first passivation layer over a substrate. The semiconductor device further includes a post passivation interconnect (PPI) line over the first passivation layer, wherein a top-most portion of the PPI line has a first portion having a convex shape and a second portion having a concave shape. The semiconductor device further includes a second passivation layer configured to cause stress to the PPI line. The semiconductor device further includes a polymer material over the second passivation layer.

A chip structure, a packaging structure and a manufacturing method of the chip structure are provided. The chip structure includes a base and an electrically conductive interconnection layer. An upper surface of the base is provided with a plurality of bonding pads, and at least two of the bonding pads have same properties. The electrically conductive interconnection layer includes a plurality of electrically conductive interconnection structures. The electrically conductive interconnection structure electrically connects the bonding pads having same properties, and is configured to be electrically connected with a pin on a packaging substrate.

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

Semiconductor devices are disclosed. According to some embodiments, a semiconductor device may include a memory array area and a peripheral area. The memory array area may include a number of memory cells and a number of array pads configured to receive an input voltage. The peripheral area may include a number of peripheral pads for interfacing with the memory array area. In these or other embodiments, the peripheral area may be arranged adjacent to a first edge of the semiconductor device and the number of array pads may be arranged proximate to a second edge of the semiconductor device. The second edge may be perpendicular to the first edge. The memory array area may also include an array distribution conductor configured to variously electrically connect the number of memory cells to the number of array pads. A semiconductor-device package and system are also disclosed.

Techniques of drawing ESD current away from an image sensor device of a CMOS image sensor die include using a light shield configured to block light from an image sensor device. The light shield may be used to draw the ESD current away when it has an electrical connection to an ESD ground bus and/or to a bond pad of the CMOS image sensor die. Advantageously, the light shield has a low resistance due to its large surface area. Accordingly, parallel connections to the bond pads and/or ESD bus have a resistance close to the low resistance of the light shield without altering the size of the die.

A semiconductor package includes a lower substrate, a connection substrate coupled to the lower substrate, the connection substrate having a lateral portion surrounding a cavity, and a first conductive pattern on a top surface of the lateral portion, a lower semiconductor chip on the lower substrate, the lower semiconductor chip being in the cavity of the connection substrate, and the lower semiconductor chip including a second conductive pattern on a top surface of the lower semiconductor chip, a bonding member connecting the first conductive pattern and the second conductive pattern to each other, and a top package on the first conductive pattern and the second conductive pattern.

An electronic device package includes a circuit layer, a first semiconductor die, a second semiconductor die, a plurality of first conductive structures and a second conductive structure. The first semiconductor die is disposed on the circuit layer. The second semiconductor die is disposed on the first semiconductor die, and has an active surface toward the circuit layer. The first conductive structures are disposed between a first region of the second semiconductor die and the first semiconductor die, and electrically connecting the first semiconductor die to the second semiconductor die. The second conductive structure is disposed between a second region of the second semiconductor die and the circuit layer, and electrically connecting the circuit layer to the second semiconductor die.

Apparatuses and methods for coupling contact pads to a circuit in a semiconductor device is described. An example apparatus includes a first pad, a first wiring coupled to the first pad, a second pad, a second wiring, a circuit coupled to the second pad, and a switch circuit. The switch circuit includes first, second, and third connections, and includes first and second control gates. The first wiring is coupled to the first and third connections and second wiring is coupled to the second connection. The switch circuit is configured to couple the first wiring with the second wiring when the first and second control gates are activated and to decouple the first wiring from the second wiring when the first and second control gates are not activated.