A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

A semiconductor device includes a plurality of connection pads having a polygonal planar shape, and edges defining a front surface on which the plurality of connection pads are disposed. The plurality of connection pads include reference pads in which a first center line passing through a vertex of the planar shape coincides with a reference line orthogonal to the adjacent edges, and first to n.sup.th rotated pads sequentially disposed from one side of one of the reference pads, and each second center line passing through the vertex of the planar shape of the first to n.sup.th rotated pads has a rotation angle (n) according to the following equation with respect to the reference line given by n=n(45/N). In the equation above, n represents an arrangement order of the first to n.sup.th rotated pads, and N is the number of the first to n.sup.th rotated pads.