A package structure including a redistribution circuit structure, an insulator, a plurality of conductive connection pieces, a first chip, a second chip, an encapsulant, a third chip, and a plurality of conductive terminals is provided. The redistribution circuit structure has first and second connection surfaces opposite to each other. The insulator is embedded in and penetrates the redistribution circuit structure. The conductive connection pieces penetrate the insulator. The first and second chips are disposed on the first connection surface. The encapsulant is disposed on the redistribution circuit structure and at least laterally covers the first and second chips. The third chip is disposed on the second connection surface and electrically connected to the first and second chips through the conductive connection pieces. The conductive terminals are disposed on the second connection surface and electrically connected to the first chip or the second chip through the redistribution circuit structure.

A release layer is formed on a surface of an integrated circuit wafer. The surface is passivated and includes metal contact materials. A stress-engineered film having an intrinsic stress profile is deposited over the release layer. The stress-engineered film is patterned and the release layer is undercut etched so that a released portion of the patterned stress-engineered film is released from the surface while leaving an anchor portion fixed to the surface. The intrinsic stress profile in the stress-engineered film biases the released portion away from the surface. The released portion is placed entirely within an area defined by the metal contact material.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a lower conductive structure, a first semiconductor device and a second semiconductor device. The upper conductive structure is disposed on the lower conductive structure. The second semiconductor device is electrically connected to the first semiconductor device by a first path in the upper conductive structure. The lower conductive structure is electrically connected to the first semiconductor device through a second path in the upper conductive structure under the first path.

Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes first and second package components stacked upon and electrically connected to each other. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps, and dimensions of the first and second conductive bumps are less than those of the third and fourth conductive bumps. The semiconductor package includes a first joint structure partially wrapping the first conductive bump and the third conductive bump, and a second joint structure partially wrapping the second conductive bump and the fourth conductive bump. A curvature of the first joint structure is different from a curvature of the second joint structure.

A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.

A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

An integrated circuit component includes a semiconductor substrate, conductive pads, a passivation layer and conductive vias. The semiconductor substrate has an active surface. The conductive pads are located on the active surface of the semiconductor substrate and electrically connected to the semiconductor substrate, and the conductive pads each have a contact region and a testing region, where in each of the conductive pads, an edge of the contact region is in contact with an edge of the testing region. The passivation layer is located on the semiconductor substrate, where the conductive pads are located between the semiconductor substrate and the passivation layer, and the testing regions and the contact regions of the conductive pads are exposed by the passivation layer. The conductive vias are respectively located on the contact regions of the conductive pads.

Implementations of image sensor packages may include a plurality of microlenses coupled over a color filter array (CFA), a low refractive index layer directly coupled to and over the plurality of microlenses, an adhesive directly coupled to and over the low refractive index layer, and an optically transmissive cover directly coupled to and over the adhesive. Implementations may include no gap present between the optically transmissive cover and the plurality of microlenses.

A stacked semiconductor device encompasses a mother-plate having a mounting-main surface and a bottom-main surface, an onboard-element having a connection face facing to the mounting-main surface, a parent bump provided on the mother-plate, having a mother-site wall made of a layer of conductor, mother-site wall is perpendicular to the mounting-main surface, and a repair bump provided on the onboard-element at a side of the connection face, having a repair-site wall made of a layer of conductor having different hardness from the mother-site wall, the repair-site wall is perpendicular to the connection face, configure to bite each other with the parent bump at an intersection between the mother-site wall and the repair-site wall conductor.