A detection structure and a detection method are provided. The method includes the following. A display backplane, a detection circuit board, and a detection light-emitting diode (LED) chip are provided. The detection circuit board is disposed on the display backplane, to connect a first detection line on the detection circuit board with a first contact electrode and connect a second detection line on the detection circuit board with a second contact electrode. A drive signal is output via the display backplane to the first detection line and the second detection line. A contact electrode pair on the display backplane corresponding to the detection LED chip is determined to be abnormal on condition that the detection LED chip is unlighted.

A detection structure and a detection method are provided. The method includes the following. A display backplane, a detection circuit board, and a detection light-emitting diode (LED) chip are provided. The detection circuit board is disposed on the display backplane, to connect a first detection line on the detection circuit board with a first contact electrode and connect a second detection line on the detection circuit board with a second contact electrode. A drive signal is output via the display backplane to the first detection line and the second detection line. A contact electrode pair on the display backplane corresponding to the detection LED chip is determined to be abnormal on condition that the detection LED chip is unlighted.

A detection method and a detection structure for a display backplane is provided in the disclosure. The detection method includes the following. The display backplane is provided. The display backplane is provided with a contact electrode pair. A detection structure is provided. The detection structure includes a light-emitting element and a detection circuit configured to conduct an electrical signal to the light-emitting element. The detection structure is assembled on the display backplane to connect the detection circuit to the contact electrode pair. A drive electrical signal is outputted to the contact electrode pair. If the light-emitting element does not emit light, the contact electrode pair is determined as a fault point.

A detection method and a detection structure for a display backplane is provided in the disclosure. The detection method includes the following. The display backplane is provided. The display backplane is provided with a contact electrode pair. A detection structure is provided. The detection structure includes a light-emitting element and a detection circuit configured to conduct an electrical signal to the light-emitting element. The detection structure is assembled on the display backplane to connect the detection circuit to the contact electrode pair. A drive electrical signal is outputted to the contact electrode pair. If the light-emitting element does not emit light, the contact electrode pair is determined as a fault point.

An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.

An apparatus, comprising an integrated circuit (IC) package having at least one solder bond pad, a die having at least one solder bond pad, wherein the die is bonded to the IC package by at least one solder joint between the at least one solder bond pad of the die, and the at least one solder bond pad of the IC package, and an underfill material between the IC package and the die, wherein the at least one solder joint is embedded in the underfill material, and wherein the at least one solder joint comprises a first metallurgy and a second metallurgy.

Aspects of the invention include a method of tuning an interconnect that couples a first structure that is a first integrated circuit or a first laminate structure to a second structure that is a second integrated circuit or a second laminate structure. The method includes obtaining a compression requirement for a spring in a compliant layer of the interconnect. A longer path length of the spring leads to greater compression and mechanical support. Current and signal speed requirements for the interconnect are obtained. A shorter path length of the spring leads to greater current-carrying capacity and greater signal speed. Specifications for the spring are determined based on the compression requirement and the current and signal speed requirements. Determining the specifications includes determining a number of active coils of the spring to be less than two.

Aspects of the invention include a method of tuning an interconnect that couples a first structure that is a first integrated circuit or a first laminate structure to a second structure that is a second integrated circuit or a second laminate structure. The method includes obtaining a compression requirement for a spring in a compliant layer of the interconnect. A longer path length of the spring leads to greater compression and mechanical support. Current and signal speed requirements for the interconnect are obtained. A shorter path length of the spring leads to greater current-carrying capacity and greater signal speed. Specifications for the spring are determined based on the compression requirement and the current and signal speed requirements. Determining the specifications includes determining a number of active coils of the spring to be less than two.

Semiconductor devices having mechanical pillar structures, such as angled pillars, that are rectangular and oriented with respect to a semiconductor die to reduce bending stress and in-plane shear stress at a semiconductor die to which the angled pillars are attached, and associated systems and methods, are disclosed herein. The semiconductor device can include angled pillars coupled to the semiconductor die and to a package substrate. The angled pillars can be configured such that they are oriented relative to a direction of local stress to increase section modulus.