H01L2224/13298

Hybrid 3D/2.5D interposer

Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

Hybrid 3D/2.5D interposer

Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

CRYSTAL CONTROLLED OSCILLATOR AND MANUFACTURING METHOD OF CRYSTAL CONTROLLED OSCILLATOR
20180248556 · 2018-08-30 · ·

A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit.

FORMING EMBEDDED CIRCUIT ELEMENTS IN SEMICONDUCTOR PACKAGE ASSEMBLES AND STRUCTURES FORMED THEREBY
20180068989 · 2018-03-08 · ·

Methods of forming stacked die assemblies are described. Those methods/structures may include forming a circuit element on a first substrate, wherein a first die is adjacent the circuit element, forming a via disposed directly on a surface of the circuit element, and forming a mold compound on the first die, on the circuit element and on the via, wherein the via and circuit element are completely embedded within the mold compound. A routing layer is formed on a top surface of the mold compound, and a second die is coupled with the routing layer.

FORMING EMBEDDED CIRCUIT ELEMENTS IN SEMICONDUCTOR PACKAGE ASSEMBLES AND STRUCTURES FORMED THEREBY
20180068989 · 2018-03-08 · ·

Methods of forming stacked die assemblies are described. Those methods/structures may include forming a circuit element on a first substrate, wherein a first die is adjacent the circuit element, forming a via disposed directly on a surface of the circuit element, and forming a mold compound on the first die, on the circuit element and on the via, wherein the via and circuit element are completely embedded within the mold compound. A routing layer is formed on a top surface of the mold compound, and a second die is coupled with the routing layer.

SEMICONDUCTOR DEVICE
20180033743 · 2018-02-01 ·

A semiconductor device equipped with a base board, a first element, a second element, and an interposer board, wherein: the first element is positioned on the base board; a signal transmitting/receiving terminal of the first element and a plurality of base board terminals contact one another; the second element is positioned on the base board; a signal transmitting/receiving terminal of the second element and the plurality of base board terminals contact one another; the interposer board is positioned so as to extend on the first element and the second element; a first contactless signal transmitting/receiving unit of the interposer board is capable of contactlessly transmitting and receiving a signal; and a second contactless signal transmitting/receiving unit of the interposer board is capable of contactlessly transmitting and receiving a signal.

SEMICONDUCTOR DEVICE
20180033743 · 2018-02-01 ·

A semiconductor device equipped with a base board, a first element, a second element, and an interposer board, wherein: the first element is positioned on the base board; a signal transmitting/receiving terminal of the first element and a plurality of base board terminals contact one another; the second element is positioned on the base board; a signal transmitting/receiving terminal of the second element and the plurality of base board terminals contact one another; the interposer board is positioned so as to extend on the first element and the second element; a first contactless signal transmitting/receiving unit of the interposer board is capable of contactlessly transmitting and receiving a signal; and a second contactless signal transmitting/receiving unit of the interposer board is capable of contactlessly transmitting and receiving a signal.

HYBRID 3D/2.5D INTERPOSER

Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

HYBRID 3D/2.5D INTERPOSER

Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

Magnetic contacts

Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with magnetic contacts, as well as corresponding fabrication methods and systems incorporating such magnetic contacts. A first IC substrate may have a first magnet coupled with a first electrical routing feature. A second IC substrate may have a second magnet coupled with a second electrical routing feature. The magnets may be embedded in the IC substrates and/or electrical routing features. The magnets may generate a magnetic field that extends across a gap between the first and second electrical routing features. Electrically conductive magnetic particles may be applied to one or both of the IC substrates to form a magnetic interconnect structure that extends across the gap. In some embodiments, magnetic contacts may be demagnetized by heating the magnets to a corresponding partial demagnetization temperature (PDT) or Curie temperature. Other embodiments may be described and/or claimed.