A light emitting diode (LED) array is formed by bonding an LED substrate to a backplane substrate via fitted nanotube interconnects. The backplane substrate may include circuits for driving the LED array. The LED substrate may be a chip or wafer, and may include one or more LED devices. The LED substrate is positioned above the backplane substrate, such that a LED device of the LED substrate is aligned to a corresponding circuit in the backplane substrate. Each of the fitted interconnects electrically connect a LED device to the corresponding circuit of the backplane substrate.

Components may be placed on an active side of a wafer as part of wafer-level chip scale packaging (WLCSP) for use in electronic devices. Pad layouts for the components on an active side of a wafer may be passivation-defined by forming a conductive terminal over a first dielectric layer and a forming a passivating, second dielectric layer over the conductive terminal. Openings formed in the second dielectric layer define component contacts to the conductive terminal and circuitry on the wafer coupled to the conductive terminal. Trenches may be used between pairs of contact pads to further reduce issues resulting from short circuits and/or underfills. A conductive pad may further be deposited in the opening to form underbump metallization (UBM) for coupling the component to the wafer.

A chip package and method of fabricating the same are described herein. The chip package includes a high speed data transmission line that has an inter-die region through which a signal transmission line couples a first die to a second die. The signal transmission line has a resistance greater than an equivalent base resistance (EBR) of a copper line, which reduces oscillation within the transmission line.

The technology of this disclosure relates to a chip packaging apparatus. The chip packaging apparatus includes a first differential pin pair, a first pin, and a second pin. The first differential pin pair includes a first differential signal pin and a second differential signal pin. In addition, the first pin and the second pin are both located between the first differential signal pin and the second differential signal pin, and the first pin and the second pin are differential signal pins (or both are power pins). The first pin is adjacent to the first differential signal pin and the second differential signal pin. The second pin is adjacent to the first differential signal pin and the second differential signal pin. The first pin and the second pin are respectively located on two sides of a first imaginary straight line connecting the first differential signal pin to the second differential signal pin.

A light emitting diode (LED) array is formed by bonding an LED substrate to a backplane substrate via magnetized interconnects. The backplane substrate may include circuits for driving the LED array, and each of the magnetized interconnects electrically connect a LED device to a corresponding circuit of the backplane substrate. The magnetized interconnects may be formed by electrically connecting first structures protruding from the backplane substrate to second structures protruding from the LED substrate. At least one of the first structure and the second structure includes ferromagnetic material configured to secure the first structure to the second structure.

The present disclosure relates to a die comprising metal pillars extending from a surface of the die, the height of each pillar being substantially equal to or greater than 20 μm, the pillars being intended to raise the die when fastening the die by means of a bonding material on a surface of a support. The metal pillars being inserted into the bonding material at which point the bonding material is annealed to be cured and hardened solidifying the bonding material to couple the die to the surface of the support.

Embodiments for a packaged semiconductor device and methods of making are provided herein, which includes a packaged semiconductor device including: a semiconductor die; a carrier; a plurality of electrical connections formed between the semiconductor die and the carrier; an electrical isolation layer that covers an outer surface of each of the plurality of electrical connections; and a conductive underfill structure between the semiconductor die and the carrier, and surrounding each of the plurality of electrical connections, wherein the electrical isolation layer electrically isolates each electrical connection from the conductive underfill structure.

The present invention provides a test pad structure of chip, which comprises a plurality of first internal test pads, a plurality of second internal test pads, a plurality of first extended test pads, and a plurality of second extended test pads. The first internal test pads and the second internal test pads are disposed in a chip. The second internal test pads and the first internal test pads are spaced by a distance. The first extended test pads are connected with the first internal test pads. The second extended test pads are connected with the second internal test pads. The first extended test pads and the second extended test pads may increase the contact area to be contacted by probes. Signals or power are transmitted to the first internal test pads and the second internal test pads via the first extended test pads and the second extended test pads for the probes to test the chip.

In one instance, a method of forming a semiconductor package with a leadframe includes cutting, such as with a laser, a first side of a metal strip to a depth D1 according to a cutting pattern to form a first plurality of openings, which may be curvilinear. The method further includes etching the second side of the metal strip to a depth D2 according to a photoresist pattern to form a second plurality of openings. At least some of the first plurality of openings are in fluid communication with at least some of the second plurality of openings to form a plurality of leadframe leads. The depth D1 is shallower than a height H of the metal strip, and the depth D2 is also shallower than the height H. Other embodiments are presented.

Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.