The present invention provides a flow guiding structure of chip, which comprises at least one flow guiding member disposed on a surface of a chip and adjacent to a plurality of connecting bumps disposed on the surface of the chip. When the chip is disposed on a board member, the at least one flow guiding member may guide the conductive medium on the surface of the chip to flow toward the connecting bumps and drive a plurality of conductive particles of the conductive medium to move toward the connecting bumps and thus increasing the number of the conductive particles on the surfaces of the connecting bumps. Alternatively, the flow guiding member may retard the flow of the conductive medium for avoiding the conductive particles from leaving the surfaces of the connecting bumps and thus preventing reduction of the number of the conductive particles on the surfaces of the connecting bumps.

The present invention provides a flow guiding structure of chip, which comprises at least one flow guiding member disposed on a surface of a chip and adjacent to a plurality of connecting bumps disposed on the surface of the chip. When the chip is disposed on a board member, the at least one flow guiding member may guide the conductive medium on the surface of the chip to flow toward the connecting bumps and drive a plurality of conductive particles of the conductive medium to move toward the connecting bumps and thus increasing the number of the conductive particles on the surfaces of the connecting bumps. Alternatively, the flow guiding member may retard the flow of the conductive medium for avoiding the conductive particles from leaving the surfaces of the connecting bumps and thus preventing reduction of the number of the conductive particles on the surfaces of the connecting bumps.

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

An integrated circuit structure includes an alignment bump and an active electrical connector. The alignment bump includes a first non-solder metallic bump. The first non-solder metallic bump forms a ring encircling an opening therein. The active electrical connector includes a second non-solder metallic bump. A surface of the first non-solder metallic bump and a surface of the second non-solder metallic bump are substantially coplanar with each other.

A device package includes a substrate having an active surface. Electrical connection bumps are deposited on the active surface and are arranged in an array having a perimeter. At least one electronic component is formed at a region of the active surface, where the region is located outside of the perimeter of the array of electrical connection bumps. When the device package is coupled with external circuitry via the electrical connection bumps, the region at which the electronic component is formed is suspended over the electronic circuitry. This region is subject to a lower stress profile than a region of the active surface circumscribed by the perimeter. Thus, stress sensitive electronic components can be located in this lower stress region of the active surface.

A semiconductor package includes a first logic die, a second logic die disposed in close proximity to the first logic die, a bridge memory die coupled to both the first logic die and the second logic die, a redistribution layer (RDL) structure coupled to the first logic die and the second logic die, and a molding compound at least partially encapsulating the first logic die, the second logic die, and the bridge memory die. The first logic die and the second logic die are coplanar.

Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.

Within a layout of a first surface in a flip chip configuration, a bump restriction area is mapped according to a set of bump placement restrictions, wherein a first bump placement restriction specifies an allowed distance range between a bump and a qubit chip element in a layout of the first surface in the flip chip configuration. An electrically conductive material is deposited outside the bump restriction area, to form the bump, wherein the bump comprises an electrically conductive structure that electrically couples a signal from the first surface and is positioned according to the set of bump placement restrictions.

Examples herein relate to optoelectronic systems or modules. In particular, implementations herein relate to an optoelectronic module or system that includes a substrate having opposing first and second sides and an optoelectronic component having opposing first and second sides flip chip assembled to the substrate. The optoelectronic component is configured to emit at least one optical signal to the substrate, receive at least one optical signal from the substrate, or both. The optoelectronic system further includes an underfill exclusion structure configured to prevent underfill material dispensed between the optoelectronic component and the substrate from flowing into an optical area or path of the at least one optical signal transmitted between the optoelectronic component and the substrate. The underfill exclusion structure is spaced apart from at least one of the optoelectronic component or the substrate.

A semiconductor package includes a semiconductor chip having chip pads on a first surface and having first and second side surfaces opposite to each other and third and fourth side surfaces opposite to each other, a molding member covering the third and fourth side surfaces and exposing the first and second side surfaces of the semiconductor chip, a redistribution wiring layer on a lower surface of the molding member to cover the first surface of the semiconductor chip and including a plurality of redistribution wirings electrically connected to the chip pads, and outer connection members arranged in a connection region defined on an outer surface of the redistribution wiring layer and electrically connected to the redistribution wirings.